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2018
Saidi R, Titaouine M, Djouimaa A, Sousa TR, Gomes Neto A, Bencherif K, Baudrand H. Characterization of Switchable Rectangular Ring FSS with Non Coupled Parallel Metallic Strips for Multi Band and Dual Polarized Applications Using WCIP Method. Journal of Microwaves, Optoelectronics and Electromagnetic ApplicationsJournal of Microwaves, Optoelectronics and Electromagnetic Applications. 2018;17 :102-120.
Saidi R, Titaouine M, Djouimaa A, Sousa TR, Gomes Neto A, Bencherif K, Baudrand H. Characterization of Switchable Rectangular Ring FSS with Non Coupled Parallel Metallic Strips for Multi Band and Dual Polarized Applications Using WCIP Method. Journal of Microwaves, Optoelectronics and Electromagnetic ApplicationsJournal of Microwaves, Optoelectronics and Electromagnetic Applications. 2018;17 :102-120.
Saidi R, Titaouine M, Djouimaa A, Sousa TR, Gomes Neto A, Bencherif K, Baudrand H. Characterization of Switchable Rectangular Ring FSS with Non Coupled Parallel Metallic Strips for Multi Band and Dual Polarized Applications Using WCIP Method. Journal of Microwaves, Optoelectronics and Electromagnetic ApplicationsJournal of Microwaves, Optoelectronics and Electromagnetic Applications. 2018;17 :102-120.
Saidi R, Titaouine M, Djouimaa A, Sousa TR, Gomes Neto A, Bencherif K, Baudrand H. Characterization of Switchable Rectangular Ring FSS with Non Coupled Parallel Metallic Strips for Multi Band and Dual Polarized Applications Using WCIP Method. Journal of Microwaves, Optoelectronics and Electromagnetic ApplicationsJournal of Microwaves, Optoelectronics and Electromagnetic Applications. 2018;17 :102-120.
Saidi R, Titaouine M, Djouimaa A, Sousa TR, Gomes Neto A, Bencherif K, Baudrand H. Characterization of Switchable Rectangular Ring FSS with Non Coupled Parallel Metallic Strips for Multi Band and Dual Polarized Applications Using WCIP Method. Journal of Microwaves, Optoelectronics and Electromagnetic ApplicationsJournal of Microwaves, Optoelectronics and Electromagnetic Applications. 2018;17 :102-120.
Bouglada MS, Naceri A, Baheddi M. Characterization of the reactivity of mineral additions by different microstructural and mechanical approaches. Mining ScienceMining Science. 2018;25.
Bouglada MS, Naceri A, Baheddi M. Characterization of the reactivity of mineral additions by different microstructural and mechanical approaches. Mining ScienceMining Science. 2018;25.
Bouglada MS, Naceri A, Baheddi M. Characterization of the reactivity of mineral additions by different microstructural and mechanical approaches. Mining ScienceMining Science. 2018;25.
Bouraya C, Ameur S. On the characterizations of some distinguished subclasses of Hilbert space operators. Acta Scientiarum MathematicarumActa Scientiarum Mathematicarum. 2018;84 :611-627.Abstract
In this note, we present several characterizations for some distinguished classes of bounded Hilbert space operators (self-adjoint operators, normal operators, unitary operators, and isometry operators) in terms of operator inequalities.
Bouraya C, Ameur S. On the characterizations of some distinguished subclasses of Hilbert space operators. Acta Scientiarum MathematicarumActa Scientiarum Mathematicarum. 2018;84 :611-627.Abstract
In this note, we present several characterizations for some distinguished classes of bounded Hilbert space operators (self-adjoint operators, normal operators, unitary operators, and isometry operators) in terms of operator inequalities.
Naima G, Daniel B, Ramdane M. Characterizing Slow state Near Si-SiO2 in MOS structure, ISSN / e-ISSN 1042-6507 / 1563-5325. Phosphorus Sulfur and Silicon and the Related ElementsPhosphorus Sulfur and Silicon and the Related Elements. 2018;Volume 193 :pp.88-91.Abstract
The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).
Naima G, Daniel B, Ramdane M. Characterizing Slow state Near Si-SiO2 in MOS structure, ISSN / e-ISSN 1042-6507 / 1563-5325. Phosphorus Sulfur and Silicon and the Related ElementsPhosphorus Sulfur and Silicon and the Related Elements. 2018;Volume 193 :pp.88-91.Abstract
The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).
Naima G, Daniel B, Ramdane M. Characterizing Slow state Near Si-SiO2 in MOS structure, ISSN / e-ISSN 1042-6507 / 1563-5325. Phosphorus Sulfur and Silicon and the Related ElementsPhosphorus Sulfur and Silicon and the Related Elements. 2018;Volume 193 :pp.88-91.Abstract
The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).
Badra BOUZGHAIA. CHEMICAL CONSTITUENTS FROM AERIAL PART OF CENTAUREA TENUIFOLIA. Séminaire International sur les plantes Médicinales(SIPM-2018)-Université d’el-oued du 17 au18 janvier . 2018.
Melakhessou A, Guenda K, Gulliver AT, Shi M, Solé P. On codes over $$\mathbb {F} _ {q}+ v\mathbb {F} _ {q}+ v^{2}\mathbb {F} _ {q} $$ F q+ v F q+ v 2 F q. Journal of Applied Mathematics and ComputingJournal of Applied Mathematics and Computing. 2018;57 :375-391.
Melakhessou A, Guenda K, Gulliver AT, Shi M, Solé P. On codes over $$\mathbb {F} _ {q}+ v\mathbb {F} _ {q}+ v^{2}\mathbb {F} _ {q} $$ F q+ v F q+ v 2 F q. Journal of Applied Mathematics and ComputingJournal of Applied Mathematics and Computing. 2018;57 :375-391.
Melakhessou A, Guenda K, Gulliver AT, Shi M, Solé P. On codes over $$\mathbb {F} _ {q}+ v\mathbb {F} _ {q}+ v^{2}\mathbb {F} _ {q} $$ F q+ v F q+ v 2 F q. Journal of Applied Mathematics and ComputingJournal of Applied Mathematics and Computing. 2018;57 :375-391.
Melakhessou A, Guenda K, Gulliver AT, Shi M, Solé P. On codes over $$\mathbb {F} _ {q}+ v\mathbb {F} _ {q}+ v^{2}\mathbb {F} _ {q} $$ F q+ v F q+ v 2 F q. Journal of Applied Mathematics and ComputingJournal of Applied Mathematics and Computing. 2018;57 :375-391.
Melakhessou A, Guenda K, Gulliver AT, Shi M, Solé P. On codes over $$\mathbb {F} _ {q}+ v\mathbb {F} _ {q}+ v^{2}\mathbb {F} _ {q} $$ F q+ v F q+ v 2 F q. Journal of Applied Mathematics and ComputingJournal of Applied Mathematics and Computing. 2018;57 :375-391.
Meriem AMS, Kamel B. Coexistence effect of some ions on the nanofiltration quality. 5ème séminaire international sur l'eau et l'environnement, 20-22 novembre. 2018.

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