@article {100433,
	title = {Cavity Length Effects on Performances of InGnAsP/InPMultiple Quantum Well Laser Diode},
	journal = {nternational Journal ofINTELLIGENT SYSTEMS AND APPLICATIONS IN ENGINEERING},
	volume = {12},
	number = {4},
	year = {2024},
	pages = {4777 -4781},
	abstract = {
	Software has been developed using the MATLAB language to analyze laser diode having the architecture InGaAsP/InP .The cavity length of active region of multi quantum well semiconductor laser effect on threshold current, quantum efficiency and optical output power of InGaAsP/InP and separate confinement heterostructure (SCH) is investigated. High-speed communication systems, especially those that use optical fiber communication for high-speed data transmission, use lasers with a wavelength of 1.55 μm. here, the performance of changing the cavity length values of active region between 250 to 500 μm at room temperature is study in this work. The characteristics power{\textendash}current (P{\textendash}I)and related features, threshold current and slope efficiency have been investigated. The threshold current decreases with increase of cavity lengths because the carrier density in the quantum well is very high. This effect is particularly pronounced in the shortest cavity measured (250μm), we extractIth=6.25ma,αi=30mA and ηd=63\%. These modifications show that our proposed structure is better compared to the GaInP/GaAs 5QW laser structure (Ith=360mA and ηd=51\%).

},
	url = {https://ijisae.org/index.php/IJISAE/article/view/7183/6149},
	author = {Benatmane, Kaled and Mahamdi, Ramdane and Touafek, Na{\"\i}ma and Rachedi, Mohamed Y}
}
