@article {38478,
	title = {Temperature and SiO 2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs},
	journal = {Applied Physics A},
	volume = {125},
	number = {5},
	year = {2019},
	pages = {294},
	publisher = {Springer},
	isbn = {0947-8396},
	author = {Bencherif, H and Dehimi, L and Pezzimenti, F and Della Corte, FG}
}
