@inbook {62556,
	title = {Design and Optimization of Heterostructure Double Gate Tunneling Field Effect Transistor for Ultra Low Power Circuit and System},
	booktitle = {Electrical and Electronic Devices, Circuits, and Materials: Technological Challenges and SolutionsElectrical and Electronic Devices, Circuits, and Materials: Technological Challenges and Solutions},
	year = {2021},
	month = {2021},
	pages = {19-36},
	abstract = {
	
		This chapter focuses on double gate (DG) Tunneling Field Effect Transistor (TFET), having band engineering and high - k dielectrics. The basic structure of TFET device is derived and developed by p-i-n diode, containing two heavily doped degenerated semiconductor {\textquotedblleft}p{\textquotedblright} and {\textquotedblleft}n{\textquotedblright} regions and lightly doped intrinsic {\textquotedblleft}i{\textquotedblright} region, respectively. The chapter explores the idea of high-k dielectric engineering as well as band engineering concept with DG -TFET. TFET is a type of field effect device in which current transport phenomena occur due to quantum tunneling between source and channel. The estimation of device characteristics and performance of TFET is time consuming and costly due to lack of rapid advancement in technology. TFET devices have become the most popular switching device among semiconductor players. The chapter summarizes the obtained results by popular device analysis technique, modeling and simulation of DG -TFET.
	

},
	url = {https://onlinelibrary.wiley.com/doi/10.1002/9781119755104.ch2},
	author = {Naima, Guenifi and Rahi, Shiromani Balmukund}
}
