@article {62653,
	title = {Layers engineering optoelectronic properties of 2D hexagonal GeS materials},
	journal = {Physica E: Low-dimensional Systems and Nanostructures},
	volume = {133},
	year = {2021},
	month = {2021},
	pages = {114791},
	abstract = {
	Using first-principles calculations, we study the structural, electronic and\&nbsp;optical properties\&nbsp;of the monolayer, bilayer and trilayer\&nbsp;germanium\&nbsp;monosulfide\&nbsp;GeS. The results reveal an indirect semiconducting band gap for the monolayer and trilayer GeS, whereas the gap is direct for the bilayer GeS. Both the\&nbsp;generalized gradient approximation\&nbsp;and the screened hybrid functionals assess a decrease in\&nbsp;band energy\&nbsp;as the number of layers is improved. Furthermore, due to the high buckling of lattice structures, the\&nbsp;optical spectra\&nbsp;show significant degree of anisotropy. The number of layers engineers key optical parameters including the\&nbsp;refractive index, the\&nbsp;reflectivity\&nbsp;absorption and provides the layered GeS with excellent absorption in the low energy region, namely the visible and UV range of the\&nbsp;electromagnetic spectrum. Accordingly, 2D hexagonal GeS few-layers can be used as a highly promising material in the\&nbsp;optoelectronic, ultraviolet optical\&nbsp;nanodevices\&nbsp;and\&nbsp;photovoltaics.

},
	isbn = {1386-9477},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S1386947721001740},
	author = {El-Bakkali, Abdelmajid and Sadki, Siham and Drissi, Lalla Btissam and Djeffal, Faycal}
}
