@proceedings {63048,
	title = {Role of Material Gate Engineering in Improving Gate All Around Junctionless (GAAJL) MOSFET Reliability Against Hot-Carrier Effects},
	journal = {2020 32nd International Conference on Microelectronics (ICM)},
	year = {2020},
	month = {2020},
	pages = {1-4},
	publisher = {IEEE},
	isbn = {1-72819-664-7},
	author = {Ferhati, Hichem and Fay{\c c}al DJEFFAL and Bentrcia, Toufik}
}
