@article {63401,
	title = {Influence of TCO intermediate thin-layers on the electrical and thermal properties of metal/TCO/p-Si Schottky structure fabricated via RF magnetron sputtering, ISSN / e-ISSN 1386-9477 / 1873-1759},
	journal = {Physica E: Low-dimensional Systems and NanostructuresPhysica E: Low-dimensional Systems and Nanostructures},
	volume = {Volume 106},
	year = {2019},
	month = {2019},
	pages = {pp 25-30},
	abstract = {In this paper, versatile\&nbsp;Metal/TCO/p-Si\&nbsp;Schottky Barrier\&nbsp;Diodes (SBDs) with dissimilar\&nbsp;TCO\&nbsp;intermediate layers (ZnO\&nbsp;and\&nbsp;ITO) were fabricated by\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;technique. An overall electrical performance comparison between the\&nbsp;Al/ZnO/p-Si, Au/ITO/p-Si\&nbsp;and the conventional\&nbsp;Au/p-Si\&nbsp;structures is carried out. The measured\&nbsp;I-V\&nbsp;characteristics indicate that the proposed\&nbsp;Al/ZnO/p-Si\&nbsp;design exhibits an outstanding capability for achieving a high rectifying ratio of 142 dB. This is mainly due to the enhanced Schottky barrier height (SBH) of\&nbsp;0.75 V and close to unite ideality factor (n = 1.23). Such behavior can be attributed to the enhanced interface quality achieved by introducing\&nbsp;TCO\&nbsp;inter-layers, which could decrease the Series resistance. A comparative study of the elaborated structures performance is carried out in which new Figures of Merit (FoM) parameters that combine both electrical and thermal stability performances are proposed. The Experimental results show that the proposed designs with\&nbsp;ITO\&nbsp;and\&nbsp;ZnO\&nbsp;sub-layers exhibits improved\&nbsp;FoM\&nbsp;parameters as compared to the conventional\&nbsp;Au/p-Si\&nbsp;structure. Moreover, this comparative study enables to the designer to acquire a comprehensive review about the\&nbsp;Si-based\&nbsp;SBDs\&nbsp;design tradeoffs. It is demonstrated that the insertion of a\&nbsp;TCO\&nbsp;inter-layer might be beneficial for avoiding the degradation related-heating effects. Therefore, the proposed designs offer the possibility of bridging the gap between superior electrical performance and high thermal stability, which makes them suitable for developing high-performance Schottky solar cells and sensing applications.},
	author = {Hichem, Ferhati and DJEFFAL Fay{\c c}al and Kacha, Kalinka and Adel, Bendjerad and A. Benhaya}
}
