@article {63527,
	title = {Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs},
	journal = {Applied Physics AApplied Physics A},
	volume = {125},
	year = {2019},
	month = {2019},
	pages = {1-10},
	isbn = {1432-0630},
	author = {Bencherif, H and Dehimi, L and Pezzimenti, F and Della Corte, FG}
}
