@article {64783,
	title = {Boron and Phosphorus Diffusion in MOS Transistors: Simulation and analyze in both 2D and 3D, ISSN / e-ISSN 1042-6507 / 1563-5325},
	journal = {Phosphorus, Sulfur, and Silicon and the Related ElementsPhosphorus, Sulfur, and Silicon and the Related Elements},
	volume = {Volume 193},
	year = {2018},
	month = {2018},
	pages = {pp 92-97},
	abstract = {The article introduces the benefits and application features of Silvaco Technology Computer Aided Design{\textquoteleft}TCAD{\textquoteright} tool to predict the performance of electrical components and their reliability. In this work, in order to improve the electrical parameters of MOS transistor such as, threshold voltage and flat band voltage, we have simulated Phosphorus and Arsenic diffusion profiles in three dimensions before and after thermal annealing in a highly doped polysilicon film using the simulator Silvaco TCAD based on Pearson type IV models. The model takes into account the distribution of vacancy mechanisms and effects related to high concentrations, such as the formation of clusters to study solid solubility limit. The results have been analyzed and discussed in order to extract depth of doping (Phosphorus and Arsenic) and they have been able to optimize the silicon oxide thickness, to reduce the penetration of doping. Based on earlier studies a study of the effect of solubility on these profiles was performed},
	author = {Naima, Guenifi and Ramdane, Mahamdi and Ibrahim, Rahmani}
}
