@article {65491,
	title = {Improved analog/RF performance of double gate junctionless MOSFET using both gate material engineering and drain/source extensions, ISSN 0749-6036},
	journal = {Superlattices and MicrostructuresSuperlattices and Microstructures},
	volume = {Volume 92},
	year = {2016},
	month = {2016},
	pages = {pp 80-91},
	abstract = {In this paper, we propose a new Double Gate Junctionless (DGJ) MOSFET design based on both gate material engineering and drain/source extensions. Analytical models for the long channel device associated to the drain current, analog and radio-frequency (RF) performance parameters are developed incorporating the impact of dual-material gate engineering and two highly doped extension regions on the analog/RF performance of DGJ MOSFET. The transistor performance figures-of-merit (FoM), governing the analog/RF behavior, have also been analyzed. The analog/RF performance is compared between the proposed design and a conventional DGJ MOSFET of similar dimensions, where the proposed device shows excellent ability in improving the analog/RF performance and provides higher drain current and improved figures-of-merit as compared to the conventional DGJ MOSFET. The obtained results have been validated against the data obtained from TCAD software for a wide range of design parameters. Moreover, the developed analytical models are used as mono-objective function to optimize the device analog/RF performance using Genetic Algorithms (GAs). In comparison with the reported numerical data for Inversion-Mode (IM) DG MOSFET, our optimized performance metrics for JL device exhibit enhancement over the reported data for IM device at the same channel length.},
	author = {E.Chebaki and DJEFFAL Fay{\c c}al and Hichem, Ferhati and Toufik, Bentrcia}
}
