@article {66386,
	title = {Gate-engineering-based approach to improve the nanoscale DG MOSFET behavior against interfacial trap effects},
	journal = {physica status solidi (c)physica status solidi (c)},
	volume = {11},
	year = {2014},
	month = {2014},
	pages = {77-80},
	isbn = {1862-6351},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Arar, Djemai and Dibi, Zouhir}
}
