@article {66960,
	title = {New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime},
	journal = {Microelectronics ReliabilityMicroelectronics Reliability},
	volume = {52},
	year = {2012},
	month = {2012},
	pages = {958-963},
	isbn = {0026-2714},
	author = {Lakhdar, N and Fay{\c c}al DJEFFAL}
}
