@article {67293,
	title = {Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects},
	journal = {Microelectronics ReliabilityMicroelectronics Reliability},
	volume = {51},
	year = {2011},
	month = {2011},
	pages = {550-555},
	isbn = {0026-2714},
	author = {Fay{\c c}al DJEFFAL and Bentrcia, Toufik and Abdi, Mohamed Amir and Bendib, T}
}
