@article {6757,
	title = {Highly-detective tunable band-selective photodetector based on RF sputtered amorphous SiC thin-film: Effect of sputtering power},
	journal = {Journal of Alloys and Compounds},
	year = {2022},
	abstract = {In this paper, a new high-performance tunable band-selective (UV-Visible)\&nbsp;photodetector\&nbsp;(PD) based on RF sputtered a-SiC active layer is demonstrated. SiC thin-films were deposited on glass substrate by RF\&nbsp;magnetron sputtering\&nbsp;method at different sputter power values ranging from 60\&nbsp;W to 120\&nbsp;W. The samples morphological, structural, optical and photodetection properties were investigated by carrying out XRD, SEM, EDS, UV-Vis spectroscopy and photoresponse measurements. It was revealed that the sputtering power could modulate the optical behavior of a-SiC alloy, tuning favorable visible absorbance at high sputter power. This phenomenon is correlated with the influence of the RF power on the SiC film structural properties and compositions. Interestingly, measurements showed that a-SiC PD elaborated at 60\&nbsp;W of RF power can detect UV radiation with a high responsivity of 138\&nbsp;mA/W, low noise effects, superior detectivity of 7.8\&nbsp;{\texttimes}\&nbsp;1012\&nbsp;Jones, while maintaining the visible blindness property. On the other hand, the prepared device at high sputtering power exhibits extended photoresponse characteristics, yielding 426\&nbsp;mA/W and 77\&nbsp;mA/W of responsivity values over UV and visible ranges, respectively. Therefore, the present investigation can provide a new strategy for the design and fabrication of photodetector devices based on SiC platform with broadband and solar-blind adjustable sensing purposes according to the desired application.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0925838822008556},
	author = {Ferhati, Hichem and Fay\c cal Djeffal and Bendjerad, Adel and Foughali, L and Benhaya, Abdelhamid and Saidi, A}
}
