@article {63111,
	title = {A comparative study on scaling capabilities of Si and SiGe nanoscale double gate tunneling FETs},
	journal = {SiliconSilicon},
	volume = {12},
	year = {2020},
	month = {2020},
	pages = {945-953},
	isbn = {1876-9918},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Ferhati, Hichem and Zohir Dibi}
}
@article {63113,
	title = {Performance evaluation of nanoscale halo dual-material double gate SiGe MOSFET using 2-D numerical simulation},
	journal = {Materials Today: ProceedingsMaterials Today: Proceedings},
	volume = {20},
	year = {2020},
	month = {2020},
	pages = {348-355},
	isbn = {2214-7853},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Chahdi, Mohamed}
}
@proceedings {63048,
	title = {Role of Material Gate Engineering in Improving Gate All Around Junctionless (GAAJL) MOSFET Reliability Against Hot-Carrier Effects},
	journal = {2020 32nd International Conference on Microelectronics (ICM)},
	year = {2020},
	month = {2020},
	pages = {1-4},
	publisher = {IEEE},
	isbn = {1-72819-664-7},
	author = {Ferhati, Hichem and Fay{\c c}al DJEFFAL and Bentrcia, Toufik}
}
@article {63215,
	title = {Carbon nanotube field-effect transistor with vacuum gate dielectric for label-free detection of DNA molecules: a computational investigation},
	journal = {IEEE Sensors JournalIEEE Sensors Journal},
	volume = {19},
	year = {2019},
	month = {2019},
	pages = {9263-9270},
	isbn = {1530-437X},
	author = {Tamersit, Khalil and Fay{\c c}al DJEFFAL}
}
@article {63214,
	title = {A computationally efficient hybrid approach based on artificial neural networks and the wavelet transform for quantum simulations of graphene nanoribbon FETs},
	journal = {Journal of Computational ElectronicsJournal of Computational Electronics},
	volume = {18},
	year = {2019},
	month = {2019},
	pages = {813-825},
	isbn = {1572-8137},
	author = {Tamersit, Khalil and Fay{\c c}al DJEFFAL}
}
@article {63448,
	title = {Giant detectivity of ZnO-based self-powered UV photodetector by inserting an engineered back gold layer using RF sputtering},
	journal = {IEEE Sensors JournalIEEE Sensors Journal},
	volume = {20},
	year = {2019},
	month = {2019},
	pages = {3512-3519},
	isbn = {1530-437X},
	author = {Ferhati, Hichem and Fay{\c c}al DJEFFAL and Benhaya, Abd-Elhamid and Bendjerad, Adel}
}
@article {63449,
	title = {High-responsivity MSM solar-blind UV photodetector based on annealed ITO/Ag/ITO structure using RF sputtering},
	journal = {IEEE Sensors JournalIEEE Sensors Journal},
	volume = {19},
	year = {2019},
	month = {2019},
	pages = {7942-7949},
	isbn = {1530-437X},
	author = {Ferhati, Hichem and Fay{\c c}al DJEFFAL}
}
@article {63606,
	title = {A nonlocal approach for semianalytical modeling of a heterojunction vertical surrounding-gate tunnel FET},
	journal = {Journal of Computational ElectronicsJournal of Computational Electronics},
	volume = {18},
	year = {2019},
	month = {2019},
	pages = {104-119},
	isbn = {1572-8137},
	author = {Abdelmalek, Nidhal and Fay{\c c}al DJEFFAL and Bentrcia, Toufik}
}
@article {65017,
	title = {ANFIS-based approach to predict the degradation-related ageing of Junctionless GAA MOSFET},
	journal = {Materials Today: ProceedingsMaterials Today: Proceedings},
	volume = {5},
	year = {2018},
	month = {2018},
	pages = {15949-15958},
	isbn = {2214-7853},
	author = {Chebaki, Elasaad and Fay{\c c}al DJEFFAL and Bentrcia, Toufik}
}
@article {64647,
	title = {Boosting the performance of a nanoscale graphene nanoribbon field-effect transistor using graded gate engineering},
	journal = {Journal of Computational ElectronicsJournal of Computational Electronics},
	volume = {17},
	year = {2018},
	month = {2018},
	pages = {1276-1284},
	isbn = {1572-8137},
	author = {Tamersit, Khalil and Fay{\c c}al DJEFFAL}
}
@article {65207,
	title = {Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation},
	journal = {Journal of Computational ElectronicsJournal of Computational Electronics},
	volume = {17},
	year = {2018},
	month = {2018},
	pages = {724-735},
	isbn = {1572-8137},
	author = {Abdelmalek, Nidhal and Fay{\c c}al DJEFFAL and Bentrcia, Toufik}
}
@article {64648,
	title = {A novel graphene field-effect transistor for radiation sensing application with improved sensitivity: Proposal and analysis},
	journal = {Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated EquipmentNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment},
	volume = {901},
	year = {2018},
	month = {2018},
	pages = {32-39},
	isbn = {0168-9002},
	author = {Tamersit, Khalil and Fay{\c c}al DJEFFAL}
}
@article {64957,
	title = {The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability},
	journal = {Beilstein Journal of NanotechnologyBeilstein Journal of Nanotechnology},
	volume = {9},
	year = {2018},
	month = {2018},
	pages = {1856-1862},
	isbn = {2190-4286},
	author = {Ferhati, Hichem and Fay{\c c}al DJEFFAL and Bentrcia, Toufik}
}
@article {64896,
	title = {Simulation and analysis of Graphene-based nanoelectronic circuits using ANN method},
	journal = {Materials Today: ProceedingsMaterials Today: Proceedings},
	volume = {5},
	year = {2018},
	month = {2018},
	pages = {15959-15967},
	isbn = {2214-7853},
	author = {Kadri, Abdelmalek and Menacer, Farid and Fay{\c c}al DJEFFAL}
}
@article {64404,
	title = {Efficiency Enhancement of a-Si: H/c-Si-Based Radial Solar Cell by Optimizing the Geometrical and Electrical Parameters},
	journal = {physica status solidi cphysica status solidi c},
	volume = {14},
	year = {2017},
	month = {2017},
	pages = {1700146},
	isbn = {1862-6351},
	author = {Ferhati, Hichem and Fay{\c c}al DJEFFAL and Arar, Djemai and Zohir Dibi}
}
@article {64491,
	title = {Improved reliability performance of junctionless nanoscale DG MOSFET with graded channel doping engineering},
	journal = {physica status solidi cphysica status solidi c},
	volume = {14},
	year = {2017},
	month = {2017},
	pages = {1700147},
	isbn = {1862-6351},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Arar, Djemai and Chebaki, Elasaad}
}
@article {64405,
	title = {Improved ZnO/glass thin film UV photodetector performance based on introduction of intermediate metallic sub-layers},
	journal = {Materials Today: ProceedingsMaterials Today: Proceedings},
	volume = {4},
	year = {2017},
	month = {2017},
	pages = {6930-6937},
	isbn = {2214-7853},
	author = {Ferhati, Hichem and Fay{\c c}al DJEFFAL}
}
@article {64490,
	title = {A Kriging framework for the efficient exploitation of the nanoscale junctioless DG MOSFETs including source/drain extensions and hot carrier effect},
	journal = {Materials Today: ProceedingsMaterials Today: Proceedings},
	volume = {4},
	year = {2017},
	month = {2017},
	pages = {6804-6813},
	isbn = {2214-7853},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Chebaki, Elasaad and Arar, Djemai}
}
@proceedings {64605,
	title = {Thermal stability investigation of power GaN HEMT includingself-heating effects},
	journal = {6th International Conference on Systems and Control (ICSC)},
	year = {2017},
	month = {2017},
	address = {Batna, Algeria},
	abstract = {
	In this paper, exhaustive analytical investigation based on analyzing the impact of the self-heating phenomenon on the power GaN HEMT performance is proposed. To do so, analytical models for the drain current, power dissipation and lattice temperature variation are developed in order to evaluate the device reliability against the self-heating effects (SHEs). The transistor thermal stability is systematically investigated with respect to the dependence on the buffer layer doping, mole fraction variation, and layer thickness. In this work, the electrical and thermal performance of power GaN HEMT structure is investigated. Also, device design parameters dependent characteristics on thermal stability and immunity are observed and analyzed. The obtained results provide new insight for bridging the gap between high power performances with thermal stability factor.

},
	author = {Aouf, Anouar Essadat and Fay{\c c}al DJEFFAL and Fouzi Douak}
}
@article {65254,
	title = {Double-gate graphene nanoribbon field-effect transistor for DNA and gas sensing applications: simulation study and sensitivity analysis},
	journal = {IEEE Sensors JournalIEEE Sensors Journal},
	volume = {16},
	year = {2016},
	month = {2016},
	pages = {4180-4191},
	isbn = {1530-437X},
	author = {Tamersit, Khalil and Fay{\c c}al DJEFFAL}
}
@article {65502,
	title = {Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs},
	journal = {Journal of Computational ElectronicsJournal of Computational Electronics},
	volume = {15},
	year = {2016},
	month = {2016},
	pages = {1308-1315},
	isbn = {1572-8137},
	author = {Djamil, Rechem and Aicha, Khial and Cherifa, Azizi and Fay{\c c}al DJEFFAL}
}
@inbook {65567,
	title = {Multi-objective Design of Nanoscale Double Gate MOSFET Devices Using Surrogate Modeling and Global Optimization},
	booktitle = {Intelligent Nanomaterials, II, Second Edition},
	year = {2016},
	month = {2016},
	pages = {395-427},
	publisher = {Willey},
	organization = {Willey},
	abstract = {In recent years, the design and fabrication ofmulti-gate Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have attracted more efforts due to their high appropriateness for advanced integration circuits{\textquoteright} applications. In fact, the boost of MOSFET structures is a battle against parasitic phenomena appearing at the nanoscale level. Short channel and quantum confinement effects are among the critical drawbacks that need to be remedied carefully. On the other hand, the hot carrier degradation effect is mainly a reliability concern affecting the device per- formance after long duration of work. In response to the high computational costs related to the development of physi- cal based models for Double Gate (DG) MOSFETs including all these effects, more flexible alternatives have been proposed for the prediction of device performances. Our aim in this chapter is to investigate the efficiency of a new proposed frame- work, built upon Kriging metamodeling and Non-dominated Sorting Genetic Algorithm version II (NSGA II), for the optimal design in terms of OFF-current, threshold voltage and swing factor. The input variables of interest are limited to the geometrical parameters namely the channel length and thickness. Data generated according to computer experiments, based on ATLAS 2-D simulator, are used to identify and adjust Kriging surrogate models. It is emphasized that the obtained models can be used accurately in a multi-objective context to offer several Pareto optimal configurations. Therefore, a wide range of selection possibilities is avail- able to the designer depending on situations under consideration.},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Chebaki, Elasaad}
}
@article {65568,
	title = {Numerical investigation of nanoscale double-gate junctionless MOSFET with drain and source extensions including interfacial defects},
	journal = {physica status solidi (c)physica status solidi (c)},
	volume = {13},
	year = {2016},
	month = {2016},
	pages = {151-155},
	isbn = {1862-6351},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Arar, Djemai and Meguellati, M}
}
@article {65477,
	title = {Role of Optimized Grooves Surface-Textured Front Glass in Improving TiO 2 Thin-Film UV Photodetector Performance},
	journal = {IEEE sensors journalIEEE Sensors Journal},
	volume = {16},
	year = {2016},
	month = {2016},
	pages = {5618-5625},
	isbn = {1530-437X},
	author = {Ferhati, Hichem and Fay{\c c}al DJEFFAL}
}
@proceedings {65820,
	title = {An Efficient RADFET Sensors Model Using Artificial Neural Network (ANN)},
	journal = {Key Engineering Materials},
	volume = {644},
	year = {2015},
	month = {2015},
	pages = {196-202},
	publisher = {Trans Tech Publ},
	isbn = {3-03835-441-4},
	author = {Fay{\c c}al Meddour and Zohir Dibi and Souhil KOUDA and Fay{\c c}al DJEFFAL}
}
@article {65989,
	title = {Numerical investigation of nanoscale SiGe DG MOSFET performance against the interfacial defects},
	journal = {physica status solidi (c)physica status solidi (c)},
	volume = {12},
	year = {2015},
	month = {2015},
	pages = {131-135},
	isbn = {1862-6351},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Dibi, Zouhir and Arar, Djemai}
}
@inbook {66387,
	title = {An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices},
	booktitle = {Transactions on Engineering Technologies},
	year = {2014},
	month = {2014},
	pages = {339-353},
	publisher = {Springer},
	organization = {Springer},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL}
}
@inbook {66399,
	title = {Fuzzy-Logic Based Computation for Parameters Identification of Solar Cell Models},
	booktitle = {Transactions on Engineering Technologies},
	year = {2014},
	month = {2014},
	pages = {327-338},
	publisher = {Springer},
	organization = {Springer},
	author = {Toufik BENDIB and Fay{\c c}al DJEFFAL}
}
@article {66386,
	title = {Gate-engineering-based approach to improve the nanoscale DG MOSFET behavior against interfacial trap effects},
	journal = {physica status solidi (c)physica status solidi (c)},
	volume = {11},
	year = {2014},
	month = {2014},
	pages = {77-80},
	isbn = {1862-6351},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Arar, Djemai and Dibi, Zouhir}
}
@article {66278,
	title = {M{\'e}thode De Seuil Simple En D{\'e}faut Diagnostic Pour Onduleur Tension Source Dans Un Contr{\^o}le Direct De Couple Induction Motor Drive},
	journal = {IEEE Trans-Power ElectrIEEE Trans-Power Electr},
	year = {2014},
	month = {2014},
	author = {Kadri, Farid and Said Drid and Fay{\c c}al DJEFFAL}
}
@article {66434,
	title = {New junctionless RADFET dosimeter design for low-cost radiation monitoring applications},
	journal = {physica status solidi (c)physica status solidi (c)},
	volume = {11},
	year = {2014},
	month = {2014},
	pages = {65-68},
	isbn = {1862-6351},
	author = {Arar, Djemai and Fay{\c c}al DJEFFAL and Bentrcia, Toufik and Chahdi, Mohamed}
}
@article {66748,
	title = {An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects},
	journal = {Microelectronics ReliabilityMicroelectronics Reliability},
	volume = {53},
	year = {2013},
	month = {2013},
	pages = {520-527},
	isbn = {0026-2714},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Chahdi, M}
}
@inbook {66707,
	title = {Multigate RADFET dosimeter for radioactive environment monitoring applications},
	booktitle = {IAENG Transactions on Engineering Technologies},
	year = {2013},
	month = {2013},
	pages = {301-313},
	publisher = {Springer},
	organization = {Springer},
	author = {Fay{\c c}al DJEFFAL and Meguellati, Mohamed}
}
@inbook {66759,
	title = {Multi-objective-based approach to optimize the analog electrical behavior of GSDG MOSFET: Application to nanoscale circuit design},
	booktitle = {IAENG Transactions on Engineering Technologies},
	year = {2013},
	month = {2013},
	pages = {315-325},
	publisher = {Springer},
	organization = {Springer},
	author = {Toufik BENDIB and Fay{\c c}al DJEFFAL}
}
@proceedings {66650,
	title = {Neural classification method in fault detection and diagnosis for voltage source inverter in variable speed drive with induction motor},
	journal = {2013 Eighth International Conference and Exhibition on Ecological Vehicles and Renewable Energies (EVER)},
	year = {2013},
	month = {2013},
	pages = {1-5},
	publisher = {IEEE},
	isbn = {1-4673-5271-3},
	author = {Kadri, Farid and Said Drid and Fay{\c c}al DJEFFAL and CHRIFI-ALAOUI, Larbi}
}
@article {66959,
	title = {A new dual-material (DM) gate design to improve the subthreshold behavior of deep submicron GaN-MESFETs},
	journal = {physica status solidi cphysica status solidi c},
	volume = {9},
	year = {2012},
	month = {2012},
	pages = {1109-1113},
	isbn = {1862-6351},
	author = {Lakhdar, Nacereddine and Fay{\c c}al DJEFFAL and Zohir Dibi}
}
@article {66960,
	title = {New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime},
	journal = {Microelectronics ReliabilityMicroelectronics Reliability},
	volume = {52},
	year = {2012},
	month = {2012},
	pages = {958-963},
	isbn = {0026-2714},
	author = {Lakhdar, N and Fay{\c c}al DJEFFAL}
}
@article {67036,
	title = {Two-dimensional numerical analysis of nanoscale junctionless and conventional Double Gate MOSFETs including the effect of interfacial traps},
	journal = {physica status solidi (c)physica status solidi (c)},
	volume = {9},
	year = {2012},
	month = {2012},
	pages = {2041-2044},
	isbn = {1862-6351},
	author = {Chebaki, Elasaad and Fay{\c c}al DJEFFAL and Bentrcia, Toufik}
}
@article {67292,
	title = {An analytical drain current model for undoped GSDG MOSFETs including interfacial hot-carrier effects},
	journal = {physica status solidi cphysica status solidi c},
	volume = {8},
	year = {2011},
	month = {2011},
	pages = {907-910},
	isbn = {1862-6351},
	author = {Fay{\c c}al DJEFFAL and Bentrcia, Toufik and Toufik BENDIB}
}
@article {67293,
	title = {Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects},
	journal = {Microelectronics ReliabilityMicroelectronics Reliability},
	volume = {51},
	year = {2011},
	month = {2011},
	pages = {550-555},
	isbn = {0026-2714},
	author = {Fay{\c c}al DJEFFAL and Bentrcia, Toufik and Abdi, Mohamed Amir and Bendib, T}
}
@article {67346,
	title = {Electrical performance optimization of nanoscale double-gate MOSFETs using multiobjective genetic algorithms},
	journal = {IEEE Transactions on Electron DevicesIEEE Transactions on Electron Devices},
	volume = {58},
	year = {2011},
	month = {2011},
	pages = {3743-3750},
	isbn = {0018-9383},
	author = {Toufik BENDIB and Fay{\c c}al DJEFFAL}
}
@article {67295,
	title = {Multi-objective genetic algorithms based approach to optimize the electrical performances of the gate stack double gate (GSDG) MOSFET},
	journal = {Microelectronics JournalMicroelectronics Journal},
	volume = {42},
	year = {2011},
	month = {2011},
	pages = {661-666},
	isbn = {0026-2692},
	author = {Fay{\c c}al DJEFFAL and Bendib, T}
}
@article {67294,
	title = {A two-dimensional semi-analytical analysis of the subthreshold-swing behavior including free carriers and interfacial traps effects for nanoscale double-gate MOSFETs},
	journal = {Microelectronics journalMicroelectronics Journal},
	volume = {42},
	year = {2011},
	month = {2011},
	pages = {1391-1395},
	isbn = {0026-2692},
	author = {Fay{\c c}al DJEFFAL and Bendib, T and Abdi, Mohamed Amir}
}
@article {67681,
	title = {Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges},
	journal = {Microelectronics ReliabilityMicroelectronics Reliability},
	volume = {49},
	year = {2009},
	month = {2009},
	pages = {377-381},
	isbn = {0026-2714},
	author = {Fay{\c c}al DJEFFAL and Ghoggali, Z and Zohir Dibi and Lakhdar, N}
}
@article {67682,
	title = {An approach based on particle swarm computation to study the electron mobility in wurtzite GaN},
	journal = {Microelectronics journalMicroelectronics Journal},
	volume = {40},
	year = {2009},
	month = {2009},
	pages = {357-359},
	isbn = {0026-2692},
	author = {Fay{\c c}al DJEFFAL and Arar, Djemai and Lakhdar, N and Bendib, T and Zohir Dibi and Chahdi, M}
}
@article {62144,
	title = {An approach based on neural computation to simulate the nanoscale CMOS circuits: Application to the simulation of CMOS inverter},
	journal = {Solid-State ElectronicsSolid-State Electronics},
	volume = {51},
	year = {2007},
	month = {2007},
	pages = {48-56},
	isbn = {0038-1101},
	author = {Fay{\c c}al DJEFFAL and Chahdi, M and Benhaya, A and Hafiane, ML}
}
