@article {62966,
	title = {An efficient hybrid solar and electromagnetic harvesting system for autonomous operation of small sensors},
	journal = {OptikOptik},
	volume = {208},
	year = {2020},
	month = {2020},
	pages = {164022},
	isbn = {0030-4026},
	author = {Meddour, Faycal and Bencherif, Hichem and Boukarkar, Abdelheq and Abdi, Mohamed Amir and Amir, Mounir}
}
@proceedings {63187,
	title = {Possible efficiency boosting of tandem solar cell by using single antireflection coating and BSF layer},
	journal = {2019 1st International Conference on Sustainable Renewable Energy Systems and Applications (ICSRESA)},
	year = {2019},
	month = {2019},
	pages = {1-4},
	publisher = {IEEE},
	isbn = {1-72815-356-5},
	author = {Yousfi, Abderrahim and Bencherif, Hichem and Dehimi, Lakhdar and Pezzimenti, Fortunato and Saidi, Lamir and Abdi, Mohamed Amir and Meddour, Faycal and Khezzar, Djamel}
}
@article {65204,
	title = {A.Yousfi, Z.Dibi, S.Aissi, H.Bencherif and L.SaidiRF/Analog Performances Enhancement of Short Channel GAAJ MOSFET using Source/Drain Extensions and Metaheuristic Optimization-based Approach},
	journal = {Journal of Telecommunication, Electronic and Computer Engineering, Vol. 10 No. 2, pp. 81-90.ISSN: 2180 {\textendash} 1843 e-ISSN: 2289-8131Journal of Telecommunication, Electronic and Computer Engineering, Vol. 10 No. 2, pp. 81-90.ISSN: 2180 {\textendash} 1843 e-ISSN: 2289-8},
	volume = {10},
	year = {2018},
	month = {2018},
	pages = {81-90},
	abstract = {This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.},
	author = {Abderrahim, Yousfi and Aissi, Salim and Bencherif, Hichem and Saidi, Lamir}
}
