@article {6757,
	title = {Highly-detective tunable band-selective photodetector based on RF sputtered amorphous SiC thin-film: Effect of sputtering power},
	journal = {Journal of Alloys and Compounds},
	year = {2022},
	abstract = {In this paper, a new high-performance tunable band-selective (UV-Visible)\&nbsp;photodetector\&nbsp;(PD) based on RF sputtered a-SiC active layer is demonstrated. SiC thin-films were deposited on glass substrate by RF\&nbsp;magnetron sputtering\&nbsp;method at different sputter power values ranging from 60\&nbsp;W to 120\&nbsp;W. The samples morphological, structural, optical and photodetection properties were investigated by carrying out XRD, SEM, EDS, UV-Vis spectroscopy and photoresponse measurements. It was revealed that the sputtering power could modulate the optical behavior of a-SiC alloy, tuning favorable visible absorbance at high sputter power. This phenomenon is correlated with the influence of the RF power on the SiC film structural properties and compositions. Interestingly, measurements showed that a-SiC PD elaborated at 60\&nbsp;W of RF power can detect UV radiation with a high responsivity of 138\&nbsp;mA/W, low noise effects, superior detectivity of 7.8\&nbsp;{\texttimes}\&nbsp;1012\&nbsp;Jones, while maintaining the visible blindness property. On the other hand, the prepared device at high sputtering power exhibits extended photoresponse characteristics, yielding 426\&nbsp;mA/W and 77\&nbsp;mA/W of responsivity values over UV and visible ranges, respectively. Therefore, the present investigation can provide a new strategy for the design and fabrication of photodetector devices based on SiC platform with broadband and solar-blind adjustable sensing purposes according to the desired application.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0925838822008556},
	author = {Ferhati, Hichem and Fay\c cal Djeffal and Bendjerad, Adel and Foughali, L and Benhaya, Abdelhamid and Saidi, A}
}
@proceedings {62646,
	title = {Germanium\&ndash;InGaZnO heterostructured thinfilm phototransistor with high IR photoresponse},
	journal = {SMACD/PRIME 2021; International Conference on SMACD and 16th Conference on PRIME},
	year = {2021},
	month = {2021},
	pages = {1-4},
	publisher = {VDE},
	address = {online},
	abstract = {In this paper, the role of introducing Germanium (Ge)/IGZO heterostructure in enhancing the Infrared (IR) photodetection properties of thin-film phototransistor (Photo- TFT) is presented. Numerical models for the investigated device are developed using ATLAS device simulator. The influence of Ge photosensitive layer thickness on the sensor IR photoresponse is carried out. It is revealed that the optimized IR Photo-TFT based on p-Ge/IGZO heterojunction can offer improved IR responsivity of 4.1{\texttimes}10(exp2) A/W, and over 10(exp6) of sensitivity. These improvements are attributed to the role of the introduced p-Ge/IGZO heterostructure in promoting IR photodetection ability and improved separation and transfer mechanisms of photo-exited electron/hole pairs. The photosensor is then implemented in an optical inverter gate circuit in order to assess its switching capabilities. It is found that the proposed phototransistor shows an improved optical gain thus indicating its excellent performance. Therefore, providing high IR responsivity and low dark noise effects, the optimized Ge/IGZO IR Photo-TFT can be a potential alternative photosensor for designing optoelectronic systems with high-performance and ultralow power consumption.},
	isbn = {3-8007-5588-2},
	url = {https://ieeexplore.ieee.org/abstract/document/9547977},
	author = {Ferhati, Hichem and Djeffal, Faycal and Bendjerad, Adel}
}
@article {63448,
	title = {Giant detectivity of ZnO-based self-powered UV photodetector by inserting an engineered back gold layer using RF sputtering},
	journal = {IEEE Sensors JournalIEEE Sensors Journal},
	volume = {20},
	year = {2019},
	month = {2019},
	pages = {3512-3519},
	isbn = {1530-437X},
	author = {Ferhati, Hichem and Fay{\c c}al DJEFFAL and Benhaya, Abd-Elhamid and Bendjerad, Adel}
}
@proceedings {65184,
	title = {Structural and magnetic study of the influence of the thickness on multilayer (Ni/NiO) deposits at room temperature},
	journal = { International Conference on Communications and Electrical Engineering (ICCEE)},
	year = {2018},
	month = {2018},
	address = { El Oued, Algeria},
	abstract = {
	The article describes a study on the influence of RF magnetron cathode sputter thickness, (09) Ni/NiO thin multilayer (each multilayer varies from 35{\r A} to 3000{\r A}). Measurements exploited by different MEB and XRD measurement techniques were obtained to give structural results and the average variation of the multilayer strength and the hysteresis cycles follow the two directions parallel and perpendicular to the substrate by VSM at room temperature. magnetic results.

},
	url = {https://ieeexplore.ieee.org/abstract/document/8634552},
	author = {Bendjerad, Adel and Abdelhamid, Benhaya and Zergoug Mourad and Fatiha, Smaili and Lahmar Abdelilah and Malika, Yakhlef and Sebti, Boukhtache and Djeffal Faycal}
}
@proceedings {65084,
	title = {Structural and magnetic study of the influence of thickness on multilayer (Ni/NiO) deposits at room temperature},
	journal = {2018 International Conference on Communications and Electrical Engineering (ICCEE)},
	year = {2018},
	month = {2018},
	pages = {1-5},
	publisher = {IEEE},
	isbn = {1-72810-112-3},
	author = {Bendjerad, Adel and Benhaya, Abdelhamid and Zergoug, Mourad and Smaili, Fatiha and Lahmar, Abdelilah and Yakhlef, Malika and Boukhtache, Sebti and Djeffal, Faycal}
}
@article {64505,
	title = {Modeling of magnetic properties (Cr/NiO/Ni) based multi-layers deposited by magnetron sputtering using Preisach model},
	journal = {Materials and DevicesMaterials and Devices},
	year = {2017},
	month = {2017},
	author = {Bendjerad, Adel and Benhaya, A and Boukhtache, S and Zergoug, M and Benyahia, K}
}
@article {65581,
	title = {Modeling of magnetic properties of iron thin films deposited by RF magnetron sputtering using Preisach model},
	journal = {Serbian Journal of Electrical EngineeringSerbian Journal of Electrical Engineering},
	volume = {13},
	year = {2016},
	month = {2016},
	pages = {229-238},
	isbn = {1451-4869},
	author = {Bendjerad, Adel and Boukhtache, Sebti and Benhaya, Abdelhamid and Luneau, Dominique and Abaidia, El Hak Seddik and Benyahia, Kaddour}
}
