@article {64431,
	title = {Effect of annealing time on the performance of tin oxide thin films ultraviolet photodetectors, ISSN 0040-6090},
	journal = {Thin Solid FilmsThin Solid Films},
	volume = {Volume 623},
	year = {2017},
	month = {2017},
	pages = {pp 1{\textendash}7},
	abstract = {Tin oxide SnO2 thin films were deposited by sol gel method on glass substrates. The as-deposited thin films were then annealed at 550\&nbsp;{\textdegree}C for different time durations (15, 30, 60 and 120\&nbsp;min). Structural and morphological investigations were carried out on all samples by X-ray diffraction method and atomic force microscopy while optical properties were obtained with UV{\textendash}Visible spectrophotometer. XRD patterns reveals that the samples possess polycrystalline with rutile structure of SnO2 without any secondary phase. AFM image showed that SnO2 thin films having a smooth surface morphology. The optical properties in the visible range showed that the deposited layers have a high transmission factor. The optical band gap energy varies in the range of 3.61{\textendash}3.73\&nbsp;eV. Finally, ultraviolet (UV) detection properties of samples as an active layer in UV photodetector devices were investigated. Current-voltage characteristics of the SnO2 thin films are performed under dark and light environment, which show low dark current of 22.9\&nbsp;nA with a linear behavior and high current ration\&nbsp;\&gt;\&nbsp;104 under 2\&nbsp;V applied voltage and 120\&nbsp;min as annealing time. Whereas, high photocurrent is observed for samples annealing for 30\&nbsp;min. Moreover, the transient photoresponse of the fabricated device is reported under different annealing times.},
	author = {Djamil, Rechem and Aicha, Khial and Abdelkader, Souifi and DJEFFAL Fay{\c c}al}
}
@article {65502,
	title = {Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs},
	journal = {Journal of Computational ElectronicsJournal of Computational Electronics},
	volume = {15},
	year = {2016},
	month = {2016},
	pages = {1308-1315},
	isbn = {1572-8137},
	author = {Djamil, Rechem and Aicha, Khial and Cherifa, Azizi and Fay{\c c}al DJEFFAL}
}
@article {65501,
	title = {Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs, ISSN 1569-8025},
	journal = {Journal of Computational ElectronicsJournal of Computational Electronics},
	volume = {Volume 15},
	year = {2016},
	month = {2016},
	pages = {pp 1308-1315},
	abstract = {The influence of gate dielectric materials on the performance of a carbon nanotube field-effect transistor has been studied by a numerical simulation model. This model is based on a two-dimensional nonequilibrium Green{\textquoteright}s function formalism performed with the self-consistent solution of the Poisson and Schr{\"o}dinger equations. The device performance is investigated in terms of leakage current, on-state current, ION/IOFF current ratio, subthreshold slope, drain-induced barrier lowering, as well as transconductance, drain conductance, and intrinsic gate delay. This study is carried out over a wide range of dielectric permittivities at low temperatures ranging from room temperature down to 100\&nbsp;K.},
	author = {Djamil, Rechem and Aicha, Khial and Cherifa, Azizi and DJEFFAL Fay{\c c}al}
}
