@proceedings {63199,
	title = {Numerical Study of Low Gain Avalanche Detector Performance},
	journal = {2018 International Conference on Communications and Electrical Engineering (ICCEE)},
	year = {2019},
	month = {2019},
	address = {El Oued, Algeria},
	abstract = {
	In this paper, we present a new ultra fast detector called Low Gain Avalanche Detector (LGAD) with low internal gain. The LGAD is fabricated with conventional APD technology with a modified doping profile, in the multiplication region, which affects the device performance such as: breakdown, multiplication gain and noise factor. For this reason, a numerical method based on Newton-Raphson calculation is proposed to estimate the electrostatic potential and electric field models of low gain avalanche detectors (LGADs) in order to investigate their performances. These models have been validated by their agreement with TCAD numerical simulation results. The effect of Boron doping profile, with different doses in the multiplication region, on the LGAD electrical performance is studied for various device structures in order to extend the device capability to its limit. In addition, LGAD devices are simulated for different temperature considering the effect of the temperature on the multiplication gain.

},
	author = {BENDIB Toufik and Brahim, Lakehal and KOUDA Souhil and Abdi Mohamed.Amir and Dendouga Abedelghani and Chebaki, Elasaad and Aouf, Anouar Essadat and Meddour Fay{\c c}al and Barra Samir}
}
@article {65017,
	title = {ANFIS-based approach to predict the degradation-related ageing of Junctionless GAA MOSFET},
	journal = {Materials Today: ProceedingsMaterials Today: Proceedings},
	volume = {5},
	year = {2018},
	month = {2018},
	pages = {15949-15958},
	isbn = {2214-7853},
	author = {Chebaki, Elasaad and Fay{\c c}al DJEFFAL and Bentrcia, Toufik}
}
@article {64491,
	title = {Improved reliability performance of junctionless nanoscale DG MOSFET with graded channel doping engineering},
	journal = {physica status solidi cphysica status solidi c},
	volume = {14},
	year = {2017},
	month = {2017},
	pages = {1700147},
	isbn = {1862-6351},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Arar, Djemai and Chebaki, Elasaad}
}
@article {64490,
	title = {A Kriging framework for the efficient exploitation of the nanoscale junctioless DG MOSFETs including source/drain extensions and hot carrier effect},
	journal = {Materials Today: ProceedingsMaterials Today: Proceedings},
	volume = {4},
	year = {2017},
	month = {2017},
	pages = {6804-6813},
	isbn = {2214-7853},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Chebaki, Elasaad and Arar, Djemai}
}
@inbook {65567,
	title = {Multi-objective Design of Nanoscale Double Gate MOSFET Devices Using Surrogate Modeling and Global Optimization},
	booktitle = {Intelligent Nanomaterials, II, Second Edition},
	year = {2016},
	month = {2016},
	pages = {395-427},
	publisher = {Willey},
	organization = {Willey},
	abstract = {In recent years, the design and fabrication ofmulti-gate Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have attracted more efforts due to their high appropriateness for advanced integration circuits{\textquoteright} applications. In fact, the boost of MOSFET structures is a battle against parasitic phenomena appearing at the nanoscale level. Short channel and quantum confinement effects are among the critical drawbacks that need to be remedied carefully. On the other hand, the hot carrier degradation effect is mainly a reliability concern affecting the device per- formance after long duration of work. In response to the high computational costs related to the development of physi- cal based models for Double Gate (DG) MOSFETs including all these effects, more flexible alternatives have been proposed for the prediction of device performances. Our aim in this chapter is to investigate the efficiency of a new proposed frame- work, built upon Kriging metamodeling and Non-dominated Sorting Genetic Algorithm version II (NSGA II), for the optimal design in terms of OFF-current, threshold voltage and swing factor. The input variables of interest are limited to the geometrical parameters namely the channel length and thickness. Data generated according to computer experiments, based on ATLAS 2-D simulator, are used to identify and adjust Kriging surrogate models. It is emphasized that the obtained models can be used accurately in a multi-objective context to offer several Pareto optimal configurations. Therefore, a wide range of selection possibilities is avail- able to the designer depending on situations under consideration.},
	author = {Bentrcia, Toufik and Fay{\c c}al DJEFFAL and Chebaki, Elasaad}
}
@article {67036,
	title = {Two-dimensional numerical analysis of nanoscale junctionless and conventional Double Gate MOSFETs including the effect of interfacial traps},
	journal = {physica status solidi (c)physica status solidi (c)},
	volume = {9},
	year = {2012},
	month = {2012},
	pages = {2041-2044},
	isbn = {1862-6351},
	author = {Chebaki, Elasaad and Fay{\c c}al DJEFFAL and Bentrcia, Toufik}
}
