@proceedings {64913,
	title = {Analytical Modeling of Amorphous Silicon-Germanium Heterojunction Solar cell including Double Layer Antireflection Coating Effects},
	journal = {2018 International Conference on Communications and Electrical Engineering (ICCEE)},
	year = {2018},
	month = {2018},
	pages = {1-4},
	publisher = {IEEE},
	isbn = {1-72810-112-3},
	author = {Hichem, Bencherif and Lakhdar, Dehimi and Lamir, Saidi and Abderrahim, Yousfi and Amir, Abdi Mohamed}
}
@article {65204,
	title = {A.Yousfi, Z.Dibi, S.Aissi, H.Bencherif and L.SaidiRF/Analog Performances Enhancement of Short Channel GAAJ MOSFET using Source/Drain Extensions and Metaheuristic Optimization-based Approach},
	journal = {Journal of Telecommunication, Electronic and Computer Engineering, Vol. 10 No. 2, pp. 81-90.ISSN: 2180 {\textendash} 1843 e-ISSN: 2289-8131Journal of Telecommunication, Electronic and Computer Engineering, Vol. 10 No. 2, pp. 81-90.ISSN: 2180 {\textendash} 1843 e-ISSN: 2289-8},
	volume = {10},
	year = {2018},
	month = {2018},
	pages = {81-90},
	abstract = {This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.},
	author = {Abderrahim, Yousfi and Aissi, Salim and Bencherif, Hichem and Saidi, Lamir}
}
@article {65202,
	title = {RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach, ISSN / e-ISSN 2180-1843 / 2289-8131},
	journal = {Journal of Telecommunication, Electronic and Computer EngineeringJournal of Telecommunication, Electronic and Computer Engineering},
	volume = {volume 10},
	year = {2018},
	month = {2018},
	abstract = {This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.},
	author = {Abderrahim, Yousfi and Dibi Zohir and Salim, Aissi and Hichem, Bencherif and Lamir, Saidi}
}
@proceedings {65203,
	title = {Role of High-K and gate engineering in improving Rf/analog performances of In 0.2 Ga0. 8As/Al0. 3Ga0. 7As HEMT},
	journal = {2018 International Conference on Communications and Electrical Engineering (ICCEE)},
	year = {2018},
	month = {2018},
	pages = {1-4},
	publisher = {IEEE},
	isbn = {1-72810-112-3},
	author = {Abderrahim, Yousfi and Hichem, Bencherif and Lamir, Saidi and Amir, Abdi Mohamed}
}
@article {64590,
	title = {Modeling and Simulation of Double Gate Field Plate In_ (0.2) Ga_ (0.8) As/Al_ (0.3) Ga_ (0.7) as HEMT using Gaussian Process Regression for Sensor Application},
	journal = {Research Journal of Applied Sciences, Engineering and TechnologyResearch Journal of Applied Sciences, Engineering and Technology},
	volume = {14},
	year = {2017},
	month = {2017},
	pages = {112-118},
	isbn = {2040-7467},
	author = {Abderrahim, Yousfi and Dibi Zohir and Mawloud, Guermoui and Salim, Aissi}
}
