@article {64783,
	title = {Boron and Phosphorus Diffusion in MOS Transistors: Simulation and analyze in both 2D and 3D, ISSN / e-ISSN 1042-6507 / 1563-5325},
	journal = {Phosphorus, Sulfur, and Silicon and the Related ElementsPhosphorus, Sulfur, and Silicon and the Related Elements},
	volume = {Volume 193},
	year = {2018},
	month = {2018},
	pages = {pp 92-97},
	abstract = {The article introduces the benefits and application features of Silvaco Technology Computer Aided Design{\textquoteleft}TCAD{\textquoteright} tool to predict the performance of electrical components and their reliability. In this work, in order to improve the electrical parameters of MOS transistor such as, threshold voltage and flat band voltage, we have simulated Phosphorus and Arsenic diffusion profiles in three dimensions before and after thermal annealing in a highly doped polysilicon film using the simulator Silvaco TCAD based on Pearson type IV models. The model takes into account the distribution of vacancy mechanisms and effects related to high concentrations, such as the formation of clusters to study solid solubility limit. The results have been analyzed and discussed in order to extract depth of doping (Phosphorus and Arsenic) and they have been able to optimize the silicon oxide thickness, to reduce the penetration of doping. Based on earlier studies a study of the effect of solubility on these profiles was performed},
	author = {Naima, Guenifi and Ramdane, Mahamdi and Ibrahim, Rahmani}
}
@article {64226,
	title = {An algorithm For Boron diffusion in MOS transistor Using SILVACO ATHENA and Matlab},
	journal = {Phosphorus, Sulfur, and Silicon and the Related Elements},
	volume = {193},
	number = {2},
	year = {2017},
	month = {2017},
	abstract = {
	In this paper we have developed an algorithm of boron diffusion after thermal annealing in a highly doped polysilicon film. This algorithm takes into account electrically active point defects by associating some parameters such as boron solubility limit and diffusion coefficient. We have studied effect of annealing temperature in order to perform impact of this parameter on maximum depth diffusion of junction and maximum of concentration by analysis of Secondary Ion Mass Spectrometry (SIMS) profiles. In fact we have proposed numerical model based on Fick{\textquoteright}s equation, resolved by finite difference method under Matlab also we have simulated this phenomenon by Silvaco software.

},
	url = {https://www.tandfonline.com/doi/abs/10.1080/10426507.2017.1417305},
	author = {Naima, Guenifi and Mahamdi, Ramdane and Ibrahim, Rahmani}
}
@proceedings {64228,
	title = {Boron and Phosphorus Diffusion in MOS Transistors: Simulation and analyze in both 2D and 3D},
	journal = {International Conference On Phosphorus, Boron and Silicon {\textendash} PBSi },
	year = {2017},
	month = {2017},
	abstract = {
	Boron Phosphorus and Arsenic atoms used as doping for the polysilicon gate they can cause crucial problem of metal-oxide- Semiconductor (MOS) devices. In this work, in order to improve the electrical parameters of MOS transistor such as, threshold voltage and flat band voltage, we have simulated Boron, Phosphorus and Arsenic Diffusion profiles in three dimensions in a polysilicon layer using the simulator Athena based on Pearson type IV models. We have study profile of dopant in 3-D before and after thermal annealing in a highly doped polysilicon film. The model takes into account the distribution of vacancy mechanism by associating parameters and effects related to high concentrations, such as the formation of clusters by trapping and exceeding the solid solubility limit. Based on the literature the model is solved under windows seven, following a well-defined algorithm. also We have studied the influence of some parameters, like concentration, temperature, time, dose and energy on implantation profiles of Boron, Phosphorus and Arsenic. The results have analyzed and discussed in order to extract depth of doping (Phosphorus Arsenic and boron) and it has been able to optimize the silicon oxide thickness, to reduce the penetration of doping. This theoretical analyses show that technological conditions preserve the quality of the silicon oxide structure studied. The model is validated with the help of simulation results obtained from Matlab

},
	url = {https://premc.org/doc/PBSI2017/PBSI2017_Book_Of_Abstracts.pdf},
	author = {Naima, Guenifi and Ramdane, Mahamdi and Ibrahim, Rahmani}
}
@article {65339,
	title = {Techniques of Boron diffusion parameters in MOS transistor Using SILVACO ATHENA and Matlab, ISSN 2069-7201},
	journal = {Journal of Advanced Research in PhysicsJournal of Advanced Research in Physics},
	volume = {volume 6},
	year = {2016},
	month = {2016},
	pages = {pp 021610},
	abstract = {Silicon oxide (SiO2) is a good dielectric material in metal-oxide-semiconductor (MOS) structures. The improved SiO2\&nbsp;quality requires adequate study of doping diffusion in this structure to maintain the absence of the different impurities in the interface Poylsilicon/SiO2. For this we studied a theoretical model of boron diffusion before and after thermal annealing in a highly-doped polysilicon films. The model takes into account the distribution of vacancy mechanism by associating parameters and effects related to high concentrations. Based on the literature the model is solved using the engineering software tool MATLAB, following a well-defined algorithm. The model is validated with the help of simulation results obtained from Silvaco.},
	author = {Naima, Guenifi and Mahamdi, R. amdane and Ibrahim, Rahmani}
}
