<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mahamdi, Ramdane</style></author><author><style face="normal" font="default" size="100%">Mansour, Farida</style></author><author><style face="normal" font="default" size="100%">Scheid, Emmanuel</style></author><author><style face="normal" font="default" size="100%">Boyer, Pierre Temple</style></author><author><style face="normal" font="default" size="100%">Jalabert, Laurent</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Boron diffusion and activation during heat treatment in heavily doped polysilicon thin films for P+ metal-oxide-semiconductor transistors gates</style></title><secondary-title><style face="normal" font="default" size="100%">Japanese journal of applied physicsJapanese Journal of Applied Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2001</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2001</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">12R</style></number><volume><style face="normal" font="default" size="100%">40</style></volume><pages><style face="normal" font="default" size="100%">6723</style></pages><isbn><style face="normal" font="default" size="100%">1347-4065</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>