<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">DJEFFAL Fayçal</style></author><author><style face="normal" font="default" size="100%">Hichem, Ferhati</style></author><author><style face="normal" font="default" size="100%">A. Benhaya</style></author><author><style face="normal" font="default" size="100%">Adel, Bendjerad</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effects of high temperature annealing in enhancing the optoelectronic performance of sputtered ITO/Ag/ITO transparent electrodes, ISSN 0749-6036</style></title><secondary-title><style face="normal" font="default" size="100%">Superlattices and MicrostructuresSuperlattices and Microstructures</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2019</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">Volume 130</style></volume><pages><style face="normal" font="default" size="100%">pp 361-368</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a transparent conductive&amp;nbsp;ITO/Ag/ITO&amp;nbsp;(IAI) multilayer structure with a high Haacke Figure of Merit (FoM) far surpassing those found up to now is experimentally demonstrated. An optimized&amp;nbsp;IAI&amp;nbsp;multilayer electrode was elaborated by means of&amp;nbsp;RF&amp;nbsp;magnetron sputtering technique. The structural and electrical characteristics of the prepared tri-layered design were investigated. The influence of the annealing process on the&amp;nbsp;IAI&amp;nbsp;electrode performance was also carried out. Unlike the&amp;nbsp;IAI&amp;nbsp;structure as-deposited, it was revealed that the annealed samples maintained an average transparency superior than&amp;nbsp;89%. This behavior indicates the effectiveness of the thermal treatment for ensuring favorable light management. In addition, it was found that the annealing process paves a new path toward improving the electrode conductivity, where the heat treated electrode at&amp;nbsp;600°C&amp;nbsp;yielded a very low sheet resistance of&amp;nbsp;2.95Ω × sq-1. Therefore, by well optimizing both&amp;nbsp;IAI&amp;nbsp;geometry and annealing conditions, we were able to elaborate high-quality coating with a superior&amp;nbsp;FoM&amp;nbsp;of&amp;nbsp;120.8 × 10-3Ω-1. This makes the sputtered&amp;nbsp;IAI&amp;nbsp;multilayer design a suitable alternative to the conventional&amp;nbsp;ITO-based electrodes for optoelectronic and photovoltaic applications.</style></abstract></record></records></xml>