<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bencherif, H</style></author><author><style face="normal" font="default" size="100%">Dehimi, L</style></author><author><style face="normal" font="default" size="100%">Pezzimenti, F</style></author><author><style face="normal" font="default" size="100%">Della Corte, FG</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics AApplied Physics A</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2019</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">125</style></volume><pages><style face="normal" font="default" size="100%">1-10</style></pages><isbn><style face="normal" font="default" size="100%">1432-0630</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>