<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Naima, Guenifi</style></author><author><style face="normal" font="default" size="100%">Bauza, D</style></author><author><style face="normal" font="default" size="100%">Mahamdi, R</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Characterizing Slow state Near Si-SiO2 in MOS structure</style></title><secondary-title><style face="normal" font="default" size="100%">Phosphorus, Sulfur, and Silicon and the Related Elements </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2017</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.tandfonline.com/doi/abs/10.1080/10426507.2017.1417303</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">193</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	GRAPHICAL ABSTRACT
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	&lt;img alt=&quot;Graphical abstract&quot; src=&quot;https://www.tandfonline.com/na101/home/literatum/publisher/tandf/journals/content/gpss20/2018/gpss20.v193.i02/10426507.2017.1417303/20180227/images/medium/gpss_a_1417303_uf0001_oc.gif&quot;&gt;
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	The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO&lt;sub&gt;2&lt;/sub&gt;&amp;nbsp;interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).
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</style></abstract><issue><style face="normal" font="default" size="100%">2</style></issue></record></records></xml>