<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Nidhal, Abdelmalek</style></author><author><style face="normal" font="default" size="100%">DJEFFAL Fayçal</style></author><author><style face="normal" font="default" size="100%">Toufik, Bentrcia</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Computational ElectronicsJournal of Computational Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2018</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">Issue 2</style></number><volume><style face="normal" font="default" size="100%">Vloume. 17</style></volume><pages><style face="normal" font="default" size="100%">pp 724-735</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-κ layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.</style></abstract></record></records></xml>