<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem, Ferhati</style></author><author><style face="normal" font="default" size="100%">DJEFFAL Fayçal</style></author><author><style face="normal" font="default" size="100%">Toufik, Bentrcia</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability, ISSN / e-ISSN 2190-4286 / 2190-4286</style></title><secondary-title><style face="normal" font="default" size="100%">Beilstein Journals of NanotechnologyBeilstein Journals of Nanotechnology</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2018</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">Volume 9</style></volume><pages><style face="normal" font="default" size="100%">pp 1856-1862</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a new nanoscale double-gate junctionless tunneling field-effect transistor (DG-JL TFET) based on a Si1-xGex/Si/Ge heterojunction (HJ) structure is proposed to achieve an improved electrical performance. The effect of introducing the Si1-xGex material at the source side on improving the subthreshold behavior of the DG-JL TFET and on suppressing ambipolar conduction is investigated. Moreover, the impact of the Ge mole fraction in the proposed Si1-xGex source region on the electrical figures of merit (FoMs) of the transistor, including the swing factor and the ION/IOFF ratio is analyzed. It is found that the optimized design with 60 atom % of Ge offers improved switching behavior and enhanced derived current capability at the nanoscale level, with a swing factor of 42 mV/dec and an ION/IOFF ratio of 115 dB. Further, the scaling capability of the proposed Si1-xGex/Si/Ge DG-HJ-JL TFET structure is investigated and compared to that of a conventional Ge-DG-JL TFET design, where the optimized design exhibits an improved switching behavior at the nanoscale level. These results make the optimized device suitable for designing digital circuit for high-performance nanoelectronic applications.</style></abstract></record></records></xml>