<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem, Ferhati</style></author><author><style face="normal" font="default" size="100%">DJEFFAL Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhanced optical and electrical performances of UV-phototransistor using graded band-gap ZnMgO photosensitive gate, ISSN 1569-8025</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Computational ElectronicsJournal of Computational Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2018</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">Issue 3</style></number><volume><style face="normal" font="default" size="100%">Volume 17</style></volume><pages><style face="normal" font="default" size="100%">pp 1181–1190</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this work, a new ultraviolet optically-controlled field-effect transistor (UV-OCFET) based on ZnMgO photosensitive gate with graded band-gap aspect is proposed and investigated using a comprehensive analytical modeling. The impact of different band-gap profiles on the phototransistor figure of merits (FoMs) is analyzed. Our study demonstrates that the use of ZnMgO with a graded band-gap profile can generate an electric field in the photosensitive layer, which leads to achieve the dual role of effective electron/hole pair separation and lower recombination losses. Moreover, increasing the Mg content progressively not only enables a strong UV-light absorption but also allows achieving a high optical sensitivity for very low optical powers (sub-1pW). The particle-swarm optimization approach is exploited to boost the phototransistor FoMs by optimizing the sensor design parameters and the ZnMgO band-gap profile. It is found that the optimized structure exhibits superior optical characteristics as compared to those of the conventional UV-photodetectors. Therefore, the optimized ZnMgO UV-OCFET with graded band-gap paradigm pinpoints a new path toward recording an ultrasensitive phototransistor compatible with CMOS modern technology. This makes it a potential alternative for high-performance and low-energy consumption chip-level UV-communication and monitoring applications.</style></abstract></record></records></xml>