<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Abderrahim, Yousfi</style></author><author><style face="normal" font="default" size="100%">Hichem, Bencherif</style></author><author><style face="normal" font="default" size="100%">Lamir, Saidi</style></author><author><style face="normal" font="default" size="100%">Amir, Abdi Mohamed</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Role of High-K and gate engineering in improving Rf/analog performances of In 0.2 Ga0. 8As/Al0. 3Ga0. 7As HEMT</style></title><secondary-title><style face="normal" font="default" size="100%">2018 International Conference on Communications and Electrical Engineering (ICCEE)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2018</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pages><style face="normal" font="default" size="100%">1-4</style></pages><isbn><style face="normal" font="default" size="100%">1-72810-112-3</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>