<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">A.Kadri</style></author><author><style face="normal" font="default" size="100%">F.Djeffal</style></author><author><style face="normal" font="default" size="100%">H. Ferhati</style></author><author><style face="normal" font="default" size="100%">F.Menacer</style></author><author><style face="normal" font="default" size="100%">Z. Dibi</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Performance analysis of a new graphene based-phototransistor for ultra-sensitive infrared sensing applications, ISSN 0030-4026</style></title><secondary-title><style face="normal" font="default" size="100%">OptikOptik</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2018</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">Volume 176</style></volume><pages><style face="normal" font="default" size="100%">pp. 24-31</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a new Graphene nanoribbon (GNR) based&amp;nbsp;Ge-phototransistor is proposed and investigated numerically by self-consistently solving the Schrödinger equation and&amp;nbsp;Poisson equation&amp;nbsp;using&amp;nbsp;non-equilibrium&amp;nbsp;Green’s function&amp;nbsp;(NEGF) formalism. An overall performance metrics comparison between both the conventional&amp;nbsp;Si-based&amp;nbsp;phototransistor&amp;nbsp;and the proposed design is performed. It is found that the proposed&amp;nbsp;GNR Ge-phototransistor provides better electrical and optical performances compared to the conventional counterpart. Moreover, using&amp;nbsp;GNR&amp;nbsp;material as a channel can improve the device performance not only enables a high&amp;nbsp;Ion/Ioff&amp;nbsp;ratio, but also allows achieving a superior sensitivity for ultra-low&amp;nbsp;optical powers. It is also revealed that the&amp;nbsp;responsivity&amp;nbsp;of the investigated design can be increased by reducing the&amp;nbsp;GNR&amp;nbsp;channel length. This underlines the outstanding capability of the proposed design for bridging the gap between modern&amp;nbsp;nanoelectronic&amp;nbsp;and&amp;nbsp;nanophotonic&amp;nbsp;technologies. In addition, the proposed&amp;nbsp;GNR-based&amp;nbsp;Ge-phototransistor can achieve an acceptable detectivity for very weak optical power intensities, in the order of some&amp;nbsp;Femto-Watts, which leads to reduce the total&amp;nbsp;power consumption&amp;nbsp;associated with&amp;nbsp;optical links. Therefore, the proposed&amp;nbsp;GNR&amp;nbsp;phototransistor pinpoints a new path toward achieving an ultrasensitive photoreceiver with&amp;nbsp;low power consumption, which makes it potential alternative for chip-level Infrared communication and nano-optoelectronic applications.</style></abstract></record></records></xml>