<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Djamil, Rechem</style></author><author><style face="normal" font="default" size="100%">Aicha, Khial</style></author><author><style face="normal" font="default" size="100%">Cherifa, Azizi</style></author><author><style face="normal" font="default" size="100%">DJEFFAL Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs, ISSN 1569-8025</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Computational ElectronicsJournal of Computational Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2016</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">Volume 15</style></volume><pages><style face="normal" font="default" size="100%">pp 1308-1315</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The influence of gate dielectric materials on the performance of a carbon nanotube field-effect transistor has been studied by a numerical simulation model. This model is based on a two-dimensional nonequilibrium Green’s function formalism performed with the self-consistent solution of the Poisson and Schrödinger equations. The device performance is investigated in terms of leakage current, on-state current, ION/IOFF current ratio, subthreshold slope, drain-induced barrier lowering, as well as transconductance, drain conductance, and intrinsic gate delay. This study is carried out over a wide range of dielectric permittivities at low temperatures ranging from room temperature down to 100&amp;nbsp;K.</style></abstract></record></records></xml>