<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Adel, Bendjerad</style></author><author><style face="normal" font="default" size="100%">A. Benhaya</style></author><author><style face="normal" font="default" size="100%">Toufik, Bentrcia</style></author><author><style face="normal" font="default" size="100%">DJEFFAL Fayçal</style></author><author><style face="normal" font="default" size="100%">M. Zergoug</style></author><author><style face="normal" font="default" size="100%">F. Smaili</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Determination of magnetic properties of a Ni/NiO/Ni multilayer:an ANFIS-based predictive technique, ISSN / e-ISSN 0947-8396 / 1432-0630</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics AApplied Physics A</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2019</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">N°1</style></number><volume><style face="normal" font="default" size="100%">volume 125</style></volume><pages><style face="normal" font="default" size="100%">pp 56</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, Ni/NiO/Ni multilayers are deposited on glass substrates using radio frequency magnetron sputtering, where the structural and morphological properties are analyzed using X-ray diffraction besides scanning electron microscopy techniques. The associated magnetic hysteresis loops are obtained by vibrating sample magnetometer for temperatures ranging from - 100 to 300 °C. Hence, the parameters α, β, Bmax, HC, and Br defining a hysteresis loop are determined at each temperature using Preisach model for the first two parameters, while the remaining ones are deduced experimentally. The set of these parameters are introduced within the training data set in the context of an ANFIS-based approach to predict the hysteresis loop of a Ni/NiO/Ni multilayer for any temperature below the Curie temperature. The comparison conducted between theoretical and experimental results showed a good agreement. This work provided more insights regarding the consolidation of experimental characterization with the development of soft computing-based frameworks.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">DJEFFAL Fayçal</style></author><author><style face="normal" font="default" size="100%">Hichem, Ferhati</style></author><author><style face="normal" font="default" size="100%">A. Benhaya</style></author><author><style face="normal" font="default" size="100%">Adel, Bendjerad</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effects of annealing temperature and ITO intermediate thin-layer on electrical proprieties of Au/p-Si structure deposited by RF magnetron sputtering, ISSN 0749-6036</style></title><secondary-title><style face="normal" font="default" size="100%">Superlattices and MicrostructuresSuperlattices and Microstructures</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2019</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">Volume 128</style></volume><pages><style face="normal" font="default" size="100%">pp 382-391</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a new&amp;nbsp;Au/p-Si&amp;nbsp;Schottky Barrier&amp;nbsp;Diode (SBD) based on&amp;nbsp;Indium&amp;nbsp;Tin Oxide (ITO) intermediate&amp;nbsp;thin-film&amp;nbsp;is proposed and experimentally investigated by including the annealing&amp;nbsp;temperature effect. We elaborated the&amp;nbsp;Au/ITO/p-Si&amp;nbsp;structure by means of&amp;nbsp;RF&amp;nbsp;magnetron sputtering&amp;nbsp;technique and compared its electrical properties with the conventional&amp;nbsp;Au/p-Si SBD. The role of the annealing process at&amp;nbsp;200&amp;nbsp;and&amp;nbsp;400 °C&amp;nbsp;as well as the&amp;nbsp;ITO&amp;nbsp;interface thin-layer in improving the&amp;nbsp;SBD&amp;nbsp;basic electrical parameters is analyzed. The characterization has revealed that a higher Schottky barrier (ϕb) of&amp;nbsp;0.79V&amp;nbsp;is achieved. Moreover, close to unit ideality factor of (n = 1.25) and reduced density of states (Nss = 1.5 × 1012cm-2) and series resistance of (Rs = 32Ω) are recorded. These achievements can be attributed to the enhanced interface quality provided by introducing the&amp;nbsp;ITO&amp;nbsp;thin-film. Moreover, the annealing process enables improved&amp;nbsp;crystallinity&amp;nbsp;and allows efficient rearrangement of atoms at the interfaces. The thermal stability behavior of the investigated designs is analyzed, where new Figure of Merit (FoMs) parameters are proposed. It is found that the annealed&amp;nbsp;Au/ITO/p-Si&amp;nbsp;structure offers the opportunity for suppressing the degradation related-heating effects. Therefore, the proposed&amp;nbsp;Au/ITO/p-Si SBD&amp;nbsp;pinpoint a new path toward achieving superior electrical characteristics and improved thermal stability, which makes it a potential alternative for high-performance microelectronic and optoelectronic applications.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">DJEFFAL Fayçal</style></author><author><style face="normal" font="default" size="100%">Hichem, Ferhati</style></author><author><style face="normal" font="default" size="100%">A. Benhaya</style></author><author><style face="normal" font="default" size="100%">Adel, Bendjerad</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effects of high temperature annealing in enhancing the optoelectronic performance of sputtered ITO/Ag/ITO transparent electrodes, ISSN 0749-6036</style></title><secondary-title><style face="normal" font="default" size="100%">Superlattices and MicrostructuresSuperlattices and Microstructures</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2019</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">Volume 130</style></volume><pages><style face="normal" font="default" size="100%">pp 361-368</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a transparent conductive&amp;nbsp;ITO/Ag/ITO&amp;nbsp;(IAI) multilayer structure with a high Haacke Figure of Merit (FoM) far surpassing those found up to now is experimentally demonstrated. An optimized&amp;nbsp;IAI&amp;nbsp;multilayer electrode was elaborated by means of&amp;nbsp;RF&amp;nbsp;magnetron sputtering technique. The structural and electrical characteristics of the prepared tri-layered design were investigated. The influence of the annealing process on the&amp;nbsp;IAI&amp;nbsp;electrode performance was also carried out. Unlike the&amp;nbsp;IAI&amp;nbsp;structure as-deposited, it was revealed that the annealed samples maintained an average transparency superior than&amp;nbsp;89%. This behavior indicates the effectiveness of the thermal treatment for ensuring favorable light management. In addition, it was found that the annealing process paves a new path toward improving the electrode conductivity, where the heat treated electrode at&amp;nbsp;600°C&amp;nbsp;yielded a very low sheet resistance of&amp;nbsp;2.95Ω × sq-1. Therefore, by well optimizing both&amp;nbsp;IAI&amp;nbsp;geometry and annealing conditions, we were able to elaborate high-quality coating with a superior&amp;nbsp;FoM&amp;nbsp;of&amp;nbsp;120.8 × 10-3Ω-1. This makes the sputtered&amp;nbsp;IAI&amp;nbsp;multilayer design a suitable alternative to the conventional&amp;nbsp;ITO-based electrodes for optoelectronic and photovoltaic applications.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem, Ferhati</style></author><author><style face="normal" font="default" size="100%">DJEFFAL Fayçal</style></author><author><style face="normal" font="default" size="100%">Kacha, Kalinka</style></author><author><style face="normal" font="default" size="100%">Adel, Bendjerad</style></author><author><style face="normal" font="default" size="100%">A. Benhaya</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Influence of TCO intermediate thin-layers on the electrical and thermal properties of metal/TCO/p-Si Schottky structure fabricated via RF magnetron sputtering, ISSN / e-ISSN 1386-9477 / 1873-1759</style></title><secondary-title><style face="normal" font="default" size="100%">Physica E: Low-dimensional Systems and NanostructuresPhysica E: Low-dimensional Systems and Nanostructures</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2019</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">Volume 106</style></volume><pages><style face="normal" font="default" size="100%">pp 25-30</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, versatile&amp;nbsp;Metal/TCO/p-Si&amp;nbsp;Schottky Barrier&amp;nbsp;Diodes (SBDs) with dissimilar&amp;nbsp;TCO&amp;nbsp;intermediate layers (ZnO&amp;nbsp;and&amp;nbsp;ITO) were fabricated by&amp;nbsp;RF&amp;nbsp;magnetron sputtering&amp;nbsp;technique. An overall electrical performance comparison between the&amp;nbsp;Al/ZnO/p-Si, Au/ITO/p-Si&amp;nbsp;and the conventional&amp;nbsp;Au/p-Si&amp;nbsp;structures is carried out. The measured&amp;nbsp;I-V&amp;nbsp;characteristics indicate that the proposed&amp;nbsp;Al/ZnO/p-Si&amp;nbsp;design exhibits an outstanding capability for achieving a high rectifying ratio of 142 dB. This is mainly due to the enhanced Schottky barrier height (SBH) of&amp;nbsp;0.75 V and close to unite ideality factor (n = 1.23). Such behavior can be attributed to the enhanced interface quality achieved by introducing&amp;nbsp;TCO&amp;nbsp;inter-layers, which could decrease the Series resistance. A comparative study of the elaborated structures performance is carried out in which new Figures of Merit (FoM) parameters that combine both electrical and thermal stability performances are proposed. The Experimental results show that the proposed designs with&amp;nbsp;ITO&amp;nbsp;and&amp;nbsp;ZnO&amp;nbsp;sub-layers exhibits improved&amp;nbsp;FoM&amp;nbsp;parameters as compared to the conventional&amp;nbsp;Au/p-Si&amp;nbsp;structure. Moreover, this comparative study enables to the designer to acquire a comprehensive review about the&amp;nbsp;Si-based&amp;nbsp;SBDs&amp;nbsp;design tradeoffs. It is demonstrated that the insertion of a&amp;nbsp;TCO&amp;nbsp;inter-layer might be beneficial for avoiding the degradation related-heating effects. Therefore, the proposed designs offer the possibility of bridging the gap between superior electrical performance and high thermal stability, which makes them suitable for developing high-performance Schottky solar cells and sensing applications.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">A. Benhaya</style></author><author><style face="normal" font="default" size="100%">DJEFFAL Fayçal</style></author><author><style face="normal" font="default" size="100%">Kacha, Kalinka</style></author><author><style face="normal" font="default" size="100%">Hichem, Ferhati</style></author><author><style face="normal" font="default" size="100%">Adel, Bendjerad</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Role of ITO ultra-thin layer in improving electrical performance and thermal reliability of Au/ITO/Si/Au structure: An experimental investigation, ISSN 0749-6036</style></title><secondary-title><style face="normal" font="default" size="100%">Superlattices and MicrostructuresSuperlattices and Microstructures</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2018</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">Volume 120</style></volume><pages><style face="normal" font="default" size="100%">pp 419-426</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, the role of introducing an intermediate Indium Tin Oxide (ITO) thin-film in improving the Au/Si Schottky Barrier Diodes (SBDs) electrical performance is experimentally analyzed. The Au/ITO/Si/Au structures with different ITO thicknesses were fabricated using RF magnetron sputtering technique. The current-voltage (I-V) characteristics of the investigated structures are analyzed, where the device electrical parameters are extracted. It is found that the introduced ITO thin-film has a significant impact in reducing the ideality factor (n=1.25), the interfacial defects (Nss=1.5×1012 eV-1cm-2) and the series resistance (Rs=32Ω). Our study demonstrates that the use of ITO intermediate thin-film can generate minority carrier injection effects, which lead to achieve the dual role of enhanced derived current and lower series resistance. Moreover, the structure thermal stability behavior is investigated and compared with those of the conventional design in order to reveal the device reliability against the thermal variation. Furthermore, the effect of the annealing on the device thermal stability is also analyzed. Our investigation shows that the annealed structure provides the possibility for avoiding the degradation related-heating effects. Therefore, the proposed Au/ITO/Si/Au structure offers the opportunity for bridging the gap between achieving superior electrical performance and enhanced thermal stability. The obtained results may facilitate the design of high-performance SBDs for sensing and microelectronic applications.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Malika, Yakhlef</style></author><author><style face="normal" font="default" size="100%">Sebti, Boukhtache</style></author><author><style face="normal" font="default" size="100%">Adel, Bendjerad</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A Theoretical Characterization of the Coupling Effects of Frequency and Mechanical Stresses on the Magnetic Properties of the Ferromagnetic Material</style></title><secondary-title><style face="normal" font="default" size="100%">2018 International Conference on Communications and Electrical Engineering (ICCEE)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2018</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pages><style face="normal" font="default" size="100%">1-5</style></pages><isbn><style face="normal" font="default" size="100%">1-72810-112-3</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Adel, Bendjerad</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude, modélisation et simulation des propriétés magnétiques par le modèle Jiles-Atherton d&amp;rsquo;une couche ferromagnétique déposée par pulvérisation cathodique magnétron RF</style></title><secondary-title><style face="normal" font="default" size="100%">NUMELEC 2017</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2017</style></date></pub-dates></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Adel, Bendjerad</style></author><author><style face="normal" font="default" size="100%">S. Boukhtache</style></author><author><style face="normal" font="default" size="100%">A. Benhaya</style></author><author><style face="normal" font="default" size="100%">Lahmar, Abdelilah</style></author><author><style face="normal" font="default" size="100%">M. Zergoug</style></author><author><style face="normal" font="default" size="100%">D. Luneau</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">RF magnetron sputtering deposition of NiO/Ni bilayer and approach of the Magnetic behavior using the Preisach model, ISSN / e-ISSN 0304-8853 / 1873-4766</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Magnetism and Magnetic MaterialsJournal of Magnetism and Magnetic Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2017</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">Volume 428</style></volume><pages><style face="normal" font="default" size="100%">pp 377-381</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Bilayer of nickel and nickel oxide were deposited on glass substrates using RF&amp;nbsp;magnetron sputtering&amp;nbsp;technique. The&amp;nbsp;magnetic properties&amp;nbsp;of the prepared thin films were carried out at room temperature in both parallel and perpendicular&amp;nbsp;magnetic field&amp;nbsp;to the sample. The Preisach model was applied to provide a&amp;nbsp;mathematical model&amp;nbsp;of the magnetic&amp;nbsp;hysteresis&amp;nbsp;loop in the case of parallel geometry, along the easy axis of the bi-layer NiO / Ni. Good agreement was obtained between the theoretical and experimental results.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Adel, Bendjerad</style></author><author><style face="normal" font="default" size="100%">Sebti, Boukhtache</style></author><author><style face="normal" font="default" size="100%">Abdelhamid, Benhaya</style></author><author><style face="normal" font="default" size="100%">Dominique, Luneau</style></author><author><style face="normal" font="default" size="100%">Hak, Abaidia Seddik El</style></author><author><style face="normal" font="default" size="100%">Kaddour, Benyahia</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Modeling of Magnetic Properties of Iron Thin Films Deposited by RF Magnetron Sputtering using Preisach Model, ISSN / e-ISSN 1451&amp;ndash;4869 / 2217&amp;ndash;7183</style></title><secondary-title><style face="normal" font="default" size="100%">Serbian Journal of Electrical EngineeringSerbian Journal of Electrical Engineering</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2016</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">N°2</style></number><volume><style face="normal" font="default" size="100%">Volume 13</style></volume><pages><style face="normal" font="default" size="100%">pp 229-238</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Iron thin films were deposited on glass substrates using RF magnetron sputtering and their optimal deposition conditions were determined. The structure properties were analyzed using x-ray diffraction (XRD) and their magnetic hysteresis loops were obtained by Vibrating Sample Magnetometer (VSM) at room temperature. In this situation, the magnetic field is either parallel or perpendicular to the substrate plane. The main contribution of this work is to characterize the thin layers and present a mathematical model that can get best fit of the characteristics B(H). By using Preisach model, good agreement was obtained between theoretical and experimental results in both cases.</style></abstract></record></records></xml>