<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati, Hichem</style></author><author><style face="normal" font="default" size="100%">Fay\c cal Djeffal</style></author><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">Foughali, L</style></author><author><style face="normal" font="default" size="100%">Benhaya, Abdelhamid</style></author><author><style face="normal" font="default" size="100%">Saidi, A</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Highly-detective tunable band-selective photodetector based on RF sputtered amorphous SiC thin-film: Effect of sputtering power</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Alloys and Compounds</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2022</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0925838822008556</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a new high-performance tunable band-selective (UV-Visible)&amp;nbsp;photodetector&amp;nbsp;(PD) based on RF sputtered a-SiC active layer is demonstrated. SiC thin-films were deposited on glass substrate by RF&amp;nbsp;magnetron sputtering&amp;nbsp;method at different sputter power values ranging from 60&amp;nbsp;W to 120&amp;nbsp;W. The samples morphological, structural, optical and photodetection properties were investigated by carrying out XRD, SEM, EDS, UV-Vis spectroscopy and photoresponse measurements. It was revealed that the sputtering power could modulate the optical behavior of a-SiC alloy, tuning favorable visible absorbance at high sputter power. This phenomenon is correlated with the influence of the RF power on the SiC film structural properties and compositions. Interestingly, measurements showed that a-SiC PD elaborated at 60&amp;nbsp;W of RF power can detect UV radiation with a high responsivity of 138&amp;nbsp;mA/W, low noise effects, superior detectivity of 7.8&amp;nbsp;×&amp;nbsp;1012&amp;nbsp;Jones, while maintaining the visible blindness property. On the other hand, the prepared device at high sputtering power exhibits extended photoresponse characteristics, yielding 426&amp;nbsp;mA/W and 77&amp;nbsp;mA/W of responsivity values over UV and visible ranges, respectively. Therefore, the present investigation can provide a new strategy for the design and fabrication of photodetector devices based on SiC platform with broadband and solar-blind adjustable sensing purposes according to the desired application.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati, Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal, Faycal</style></author><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Germanium&amp;ndash;InGaZnO heterostructured thinfilm phototransistor with high IR photoresponse</style></title><secondary-title><style face="normal" font="default" size="100%">SMACD/PRIME 2021; International Conference on SMACD and 16th Conference on PRIME</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2021</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/abstract/document/9547977</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">VDE</style></publisher><pub-location><style face="normal" font="default" size="100%">online</style></pub-location><pages><style face="normal" font="default" size="100%">1-4</style></pages><isbn><style face="normal" font="default" size="100%">3-8007-5588-2</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, the role of introducing Germanium (Ge)/IGZO heterostructure in enhancing the Infrared (IR) photodetection properties of thin-film phototransistor (Photo- TFT) is presented. Numerical models for the investigated device are developed using ATLAS device simulator. The influence of Ge photosensitive layer thickness on the sensor IR photoresponse is carried out. It is revealed that the optimized IR Photo-TFT based on p-Ge/IGZO heterojunction can offer improved IR responsivity of 4.1×10(exp2) A/W, and over 10(exp6) of sensitivity. These improvements are attributed to the role of the introduced p-Ge/IGZO heterostructure in promoting IR photodetection ability and improved separation and transfer mechanisms of photo-exited electron/hole pairs. The photosensor is then implemented in an optical inverter gate circuit in order to assess its switching capabilities. It is found that the proposed phototransistor shows an improved optical gain thus indicating its excellent performance. Therefore, providing high IR responsivity and low dark noise effects, the optimized Ge/IGZO IR Photo-TFT can be a potential alternative photosensor for designing optoelectronic systems with high-performance and ultralow power consumption.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati, Hichem</style></author><author><style face="normal" font="default" size="100%">Fayçal DJEFFAL</style></author><author><style face="normal" font="default" size="100%">Benhaya, Abd-Elhamid</style></author><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Giant detectivity of ZnO-based self-powered UV photodetector by inserting an engineered back gold layer using RF sputtering</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Sensors JournalIEEE Sensors Journal</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2019</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">7</style></number><volume><style face="normal" font="default" size="100%">20</style></volume><pages><style face="normal" font="default" size="100%">3512-3519</style></pages><isbn><style face="normal" font="default" size="100%">1530-437X</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">Abdelhamid, Benhaya</style></author><author><style face="normal" font="default" size="100%">Zergoug Mourad</style></author><author><style face="normal" font="default" size="100%">Fatiha, Smaili</style></author><author><style face="normal" font="default" size="100%">Lahmar Abdelilah</style></author><author><style face="normal" font="default" size="100%">Malika, Yakhlef</style></author><author><style face="normal" font="default" size="100%">Sebti, Boukhtache</style></author><author><style face="normal" font="default" size="100%">Djeffal Faycal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Structural and magnetic study of the influence of the thickness on multilayer (Ni/NiO) deposits at room temperature</style></title><secondary-title><style face="normal" font="default" size="100%"> International Conference on Communications and Electrical Engineering (ICCEE)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2018</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/abstract/document/8634552</style></url></web-urls></urls><pub-location><style face="normal" font="default" size="100%"> El Oued, Algeria</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	The article describes a study on the influence of RF magnetron cathode sputter thickness, (09) Ni/NiO thin multilayer (each multilayer varies from 35Å to 3000Å). Measurements exploited by different MEB and XRD measurement techniques were obtained to give structural results and the average variation of the multilayer strength and the hysteresis cycles follow the two directions parallel and perpendicular to the substrate by VSM at room temperature. magnetic results.
&lt;/p&gt;
</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">Benhaya, Abdelhamid</style></author><author><style face="normal" font="default" size="100%">Zergoug, Mourad</style></author><author><style face="normal" font="default" size="100%">Smaili, Fatiha</style></author><author><style face="normal" font="default" size="100%">Lahmar, Abdelilah</style></author><author><style face="normal" font="default" size="100%">Yakhlef, Malika</style></author><author><style face="normal" font="default" size="100%">Boukhtache, Sebti</style></author><author><style face="normal" font="default" size="100%">Djeffal, Faycal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Structural and magnetic study of the influence of thickness on multilayer (Ni/NiO) deposits at room temperature</style></title><secondary-title><style face="normal" font="default" size="100%">2018 International Conference on Communications and Electrical Engineering (ICCEE)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2018</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pages><style face="normal" font="default" size="100%">1-5</style></pages><isbn><style face="normal" font="default" size="100%">1-72810-112-3</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">Benhaya, A</style></author><author><style face="normal" font="default" size="100%">Boukhtache, S</style></author><author><style face="normal" font="default" size="100%">Zergoug, M</style></author><author><style face="normal" font="default" size="100%">Benyahia, K</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Modeling of magnetic properties (Cr/NiO/Ni) based multi-layers deposited by magnetron sputtering using Preisach model</style></title><secondary-title><style face="normal" font="default" size="100%">Materials and DevicesMaterials and Devices</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2017</style></date></pub-dates></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">Boukhtache, Sebti</style></author><author><style face="normal" font="default" size="100%">Benhaya, Abdelhamid</style></author><author><style face="normal" font="default" size="100%">Luneau, Dominique</style></author><author><style face="normal" font="default" size="100%">Abaidia, El Hak Seddik</style></author><author><style face="normal" font="default" size="100%">Benyahia, Kaddour</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Modeling of magnetic properties of iron thin films deposited by RF magnetron sputtering using Preisach model</style></title><secondary-title><style face="normal" font="default" size="100%">Serbian Journal of Electrical EngineeringSerbian Journal of Electrical Engineering</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2016</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">2</style></number><volume><style face="normal" font="default" size="100%">13</style></volume><pages><style face="normal" font="default" size="100%">229-238</style></pages><isbn><style face="normal" font="default" size="100%">1451-4869</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>