In this paper, a new TiO2-based UV photodetector including back triangular texturization morphology has been investigated numerically using accurate solutions of Maxwell’s equations. A quantitative study of the device optical parameters like responsivity, sensitivity, detectivity, derived current capability and signal to noise ratio have been carried out in order to review the device overall optical performance for UV optical communication applications. Based on the obtained results, we have found that the device performance figures-of-merit (FoMs) governing the optical behavior is strongly improved as compared to its conventional planar counterpart, where the proposed design offers superior photocurrent, higher responsivity and sensitivity in comparison with those provided by the planar structure. These results led us to suggest the optimization of the proposed morphology using genetic algorithm (GA), in order to improve the electric field confinement and UV-light trapping in TiO2 absorber layer, where excellent ability has been recorded in enhancing the device absorbance. In this context, photodetector with optimized triangular texturization exhibits a 432% improvement, in term of responsivity, over planar structures and 120% improvement over the textured device without optimization. Thus, these encouraging results make the proposed device an extremely efficient candidate for high performance optoelectronic applications.

In this paper, we propose a new optically controlled field effect transistor, OC-FET, based on both surface texturization and graded gate doping engineering. The proposed design consists of a gate with both graded doping and surface texturization aspects to ensure high efficient light absorption and low dark current, respectively. Moreover, using an analytical investigation, an overall performance comparison of the proposed dual texturized gate (DTG) OC-FET device and conventional OC-FETs has been studied in order to confirm the enhanced optical and electrical performance of the proposed design in terms of increased photoresponsivity (R), optical gain (Formula presented.) ratio, drain current driving capability (Formula presented.) and high signal to noise ratio. Simulations show very good agreement between the results of the developed analytical models and those of TCAD software for wide range of design parameters. The developed analytical models are used to formulate the objective functions to optimize the device performance using a multi-objective genetic algorithm (MOGA). The proposed MOGA-based approach is used to search the optimal design parameters, for which the electrical and optical device performance is maximized. The obtained superior electrical performance suggests that our DTG OC-FET offers great promise as optical sensors and transducers for CMOS-based optical communications.

The objective of this paper is to develop a novel combined MPPT-pitch angle robust control system of a variable-speed wind turbine. The direct driven wind turbine using the permanent magnet synchronous generator (PMSG) is connected to the grid by means of fully controlled frequency converters, which consist of a pulse width-modulation PWM rectifier connected to an inverter via an intermediate DC bus. In order to maximize the exploited wind power and benefit from a wide range of the wind speed, a novel combined maximum power point tracking (MPPT)-Pitch angle control is developed using only one low cost circuit based on Neural Network (ANN), which allows the PMSG to operate at an optimal speed to extract maximum power when this last is lower than nominal power, and limit the extra power. To achieve feeding the grid with high-power and good quality of electrical energy, the inverter is controlled by (PWM) in a way to deliver only the active power into the grid, and thus to obtain a unit power factor. DC-link voltage is also controlled by the inverter. The dynamic and steady-state performances of the wind energy conversion system (WECS) are carried by using Matlab Simulink.

In this article, a novel sensitive encryption scheme to secure the digital images based on the Zaslavsky chaotic map is proposed. We employ the Zaslavsky chaotic map as a pseudo-random generator to produce the key encryption of the proposed image cryptosystem. The cipher structure has been chosen based on permutation-diffusion processes, where we adopt the classic permutation substitution network, which ensures both confusion and diffusion properties for the encrypted image. Our proposed algorithm has high sensitivity in plain image and the secret key. Moreover, the results show that the characteristics of our approach have excellent performance, with high scores (NPRC = 99.61%, UACI = 33.47%, entropy (CipherImage)  8, and correlation coefficient  0). Experimental results have been studied and analyzed in detail with various types of security analysis. These results demonstrate that our proposed cryptosystem has highly satisfactory security performance and can withstand various attacks compared to state-of-the-art methods.

In this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) is proposed to improve the device performance as well as achieving low power consumption. An overall optical and electrical performances comparison of the proposed junctionless design and the conventional inversion mode structure (IM-OCFET) has been developed numerically, to assess the optical modulation behavior of the OCFET for low power optical interconnections applications. It is found that, the proposed design demonstrates excellent capability in decreasing the phototransistor power consumption for inter-chip optical communication application. Moreover, the proposed device offers superior sensitivity and ION/IOFF ratio, in addition to lower signal to noise ratio as compared to the conventional IM-OCFET structure. The obtained results indicate the crucial role of the junctionless (JL) design in enhancing the phototransistor performance and reducing the total power dissipation. Such a very sensitive OCFET can be very promising in the future low power optical receiver less compatible to CMOS modern technology for high-quality interchips data communication applications.

The use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Recently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogeneratorbased circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogeneratorbased process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.

Recently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogenerator-based circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogenerator-based process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.