An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices

Citation:

Bentrcia T, DJEFFAL F. An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices. In: Transactions on Engineering Technologies. Springer ; 2014. pp. 339-353.

Publications /Année

Submitted (11)
2024 (16)
2023 (28)
2022 (169)
2021 (473)
2020 (440)
2019 (553)
2018 (630)
2017 (522)
2016 (439)

Publications / Auteur

Publications / Types