An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices

Citation:

Bentrcia T, DJEFFAL F. An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices. In: Transactions on Engineering Technologies. Springer ; 2014. pp. 339-353.

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