Citation:
Guenifi N, Radane M, Rahmani I. An algorithm For Boron diffusion in MOS transistor Using SILVACO ATHENA and Matlab, ISSN / e-ISSN 1042-6507 / 1563-5325. Phosphorus, Sulfur, and Silicon and the Related ElementsPhosphorus, Sulfur, and Silicon and the Related Elements. 2018;Volume 193 :pp.98-103.
Date Published:
2018Abstract:
In this paper we have developed an algorithm of boron diffusion after thermal annealing in a highly doped polysilicon film. This algorithm takes into account electrically active point defects by associating some parameters such as boron solubility limit and diffusion coefficient. We have studied effect of annealing temperature in order to perform impact of this parameter on maximum depth diffusion of junction and maximum of concentration by analysis of Secondary Ion Mass Spectrometry (SIMS) profiles. In fact we have proposed numerical model based on Fick’s equation, resolved by finite difference method under Matlab also we have simulated this phenomenon by Silvaco software.