Seghir K, Bendaoui M, Benbouta R.
A Contact Problem of an Elastic Layer Compressed by Two Punches of Different Radii. Journal of Solid MechanicsJournal of Solid Mechanics. 2018;10 :571-580.
Seghir K, Bendaoui M, Benbouta R.
A Contact Problem of an Elastic Layer Compressed by Two Punches of Different Radii. Journal of Solid MechanicsJournal of Solid Mechanics. 2018;10 :571-580.
Seghir K, Bendaoui M, Benbouta R.
A Contact Problem of an Elastic Layer Compressed by Two Punches of Different Radii. Journal of Solid MechanicsJournal of Solid Mechanics. 2018;10 :571-580.
Nidhal A, Fayçal DJEFFAL, Toufik B.
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;Vloume. 17 :pp 724-735.
AbstractA continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-κ layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.
Abdelmalek N, DJEFFAL F, Bentrcia T.
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;17 :724-735.
Nidhal A, Fayçal DJEFFAL, Toufik B.
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;Vloume. 17 :pp 724-735.
AbstractA continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-κ layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.
Abdelmalek N, DJEFFAL F, Bentrcia T.
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;17 :724-735.
Nidhal A, Fayçal DJEFFAL, Toufik B.
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;Vloume. 17 :pp 724-735.
AbstractA continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-κ layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.
Abdelmalek N, DJEFFAL F, Bentrcia T.
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;17 :724-735.
Saouli A, Ounassa ADJROUD, Fedala A.
Contribution a la recherche des effets du chrome hexavalent sur la leucopoïèse chez la rate gestante de la souche Albinos Wistar. Séminaire National de "Biotechnologie, Environnement & Santé. Université de Jijel. 27-28 Novembre [Internet]. 2018.
Publisher's VersionAbstract
The goal of this study was to assess the effects of chromium on the immune parameters in the pregnant rats.
Saouli A, Ounassa ADJROUD, Fedala A.
Contribution a la recherche des effets du chrome hexavalent sur la leucopoïèse chez la rate gestante de la souche Albinos Wistar. Séminaire National de "Biotechnologie, Environnement & Santé. Université de Jijel. 27-28 Novembre [Internet]. 2018.
Publisher's VersionAbstract
The goal of this study was to assess the effects of chromium on the immune parameters in the pregnant rats.
Saouli A, Ounassa ADJROUD, Fedala A.
Contribution a la recherche des effets du chrome hexavalent sur la leucopoïèse chez la rate gestante de la souche Albinos Wistar. Séminaire National de "Biotechnologie, Environnement & Santé. Université de Jijel. 27-28 Novembre [Internet]. 2018.
Publisher's VersionAbstract
The goal of this study was to assess the effects of chromium on the immune parameters in the pregnant rats.