Chelgham M.
ON CERTAIN INVARIANTS OF TRIVECTORS. Communications in Applied AnalysisCommunications in Applied Analysis. 2017;21 :595-606.
AbstractLet E be a n-dimensional vector space over a field k and ω a trivector of Λ3E. We can associate to the trivector ω several invariants either algebraic, arithmetic or geometric. In this paper we consider the following three invariants, the commutant C(ω), the complexity c(ω) and the automorphisms group Aut(ω). We show that there exists a vector space E and a trivector ω of Λ3E for which C(ω) is not a Frobenius algebra. We also show that the complexity c(ω) and the length l(ω) are equal. Finally, we prove the existence of a trivector ω such that Aut(ω) is not a FC-group.
Chermime B, Abboudi A, Djebaili H, Brioua M.
Characterisation of Mo–V–N Coatings Deposited on XC100 Substrate by Sputtering Cathodic Magnetron. Металлофизика и новейшие технологииМеталлофизика и новейшие технологии. 2017.
Chermime B, Abboudi A, Djebaili H, Brioua M.
Characterisation of Mo–V–N Coatings Deposited on XC100 Substrate by Sputtering Cathodic Magnetron. Металлофизика и новейшие технологииМеталлофизика и новейшие технологии. 2017.
Chermime B, Abboudi A, Djebaili H, Brioua M.
Characterisation of Mo–V–N Coatings Deposited on XC100 Substrate by Sputtering Cathodic Magnetron. Металлофизика и новейшие технологииМеталлофизика и новейшие технологии. 2017.
Chermime B, Abboudi A, Djebaili H, Brioua M.
Characterisation of Mo–V–N Coatings Deposited on XC100 Substrate by Sputtering Cathodic Magnetron. Металлофизика и новейшие технологииМеталлофизика и новейшие технологии. 2017.
Chermime B, Abboudi A, Djebaili H, Brioua M.
Characterisation of Mo–V–N Coatings Deposited on XC100 Substrate by Sputtering Cathodic Magnetron. Металлофизика и новейшие технологииМеталлофизика и новейшие технологии. 2017.
Chermime B, Abboudi A, Djebaili H, Brioua M.
Characterisation of Mo–V–N Coatings Deposited on XC100 Substrate by Sputtering Cathodic Magnetron. Металлофизика и новейшие технологииМеталлофизика и новейшие технологии. 2017.
Chermime B, Abboudi A, Djebaili H, Brioua M.
Characterisation of Mo–V–N Coatings Deposited on XC100 Substrate by Sputtering Cathodic Magnetron. Металлофизика и новейшие технологииМеталлофизика и новейшие технологии. 2017.
Chermime B, Abboudi A, Djebaili H, Brioua M.
Characterisation of Mo–V–N Coatings Deposited on XC100 Substrate by Sputtering Cathodic Magnetron. Металлофизика и новейшие технологииМеталлофизика и новейшие технологии. 2017.
Abboudi A, Chermime B, Djebaili H, Brioua M.
Characterization of the Microstructural and Mechanical Properties of MoZrN Coating. Journal of Nano-and Electronic PhysicsJournal of Nano-and Electronic Physics. 2017;9 :1014-1.
Abboudi A, Chermime B, Djebaili H, Brioua M.
Characterization of the Microstructural and Mechanical Properties of MoZrN Coating. Journal of Nano-and Electronic PhysicsJournal of Nano-and Electronic Physics. 2017;9 :1014-1.
Abboudi A, Chermime B, Djebaili H, Brioua M.
Characterization of the Microstructural and Mechanical Properties of MoZrN Coating. Journal of Nano-and Electronic PhysicsJournal of Nano-and Electronic Physics. 2017;9 :1014-1.
Abboudi A, Chermime B, Djebaili H, Brioua M.
Characterization of the Microstructural and Mechanical Properties of MoZrN Coating. Journal of Nano-and Electronic PhysicsJournal of Nano-and Electronic Physics. 2017;9 :1014-1.
Naima G, Bauza D, Mahamdi R.
Characterizing Slow state Near Si-SiO2 in MOS structure. Phosphorus, Sulfur, and Silicon and the Related Elements [Internet]. 2017;193 (2).
Publisher's VersionAbstract
GRAPHICAL ABSTRACT
The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).
Naima G, Bauza D, Mahamdi R.
Characterizing Slow state Near Si-SiO2 in MOS structure. Phosphorus, Sulfur, and Silicon and the Related Elements [Internet]. 2017;193 (2).
Publisher's VersionAbstract
GRAPHICAL ABSTRACT
The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).
Naima G, Bauza D, Mahamdi R.
Characterizing Slow state Near Si-SiO2 in MOS structure. Phosphorus, Sulfur, and Silicon and the Related Elements [Internet]. 2017;193 (2).
Publisher's VersionAbstract
GRAPHICAL ABSTRACT
The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).
Tilbi D, Seddik-Ameur N.
Chi-squared goodness-of-fit tests for the generalized Rayleigh distribution. Journal of Statistical Theory and PracticeJournal of Statistical Theory and Practice. 2017;11 :594-603.
Tilbi D, Seddik-Ameur N.
Chi-squared goodness-of-fit tests for the generalized Rayleigh distribution. Journal of Statistical Theory and PracticeJournal of Statistical Theory and Practice. 2017;11 :594-603.