Ziani D, Boudoukha A, Boumazbeur A, Benaabidate L, Fehdi C.
Investigation of groundwater hydrochemical characteristics using the multivariate statistical analysis in Ain Djacer area, Eastern Algeria. Desalination and Water TreatmentDesalination and Water Treatment. 2016;57 :26993-27002.
Ziani D, Boudoukha A, Boumazbeur A, Benaabidate L, Fehdi C.
Investigation of groundwater hydrochemical characteristics using the multivariate statistical analysis in Ain Djacer area, Eastern Algeria. Desalination and Water TreatmentDesalination and Water Treatment. 2016;57 :26993-27002.
Ziani D, Boudoukha A, Boumazbeur A, Benaabidate L, Fehdi C.
Investigation of groundwater hydrochemical characteristics using the multivariate statistical analysis in Ain Djacer area, Eastern Algeria. Desalination and Water TreatmentDesalination and Water Treatment. 2016;57 :26993-27002.
Ziani D, Boudoukha A, Boumazbeur A, Benaabidate L, Fehdi C.
Investigation of groundwater hydrochemical characteristics using the multivariate statistical analysis in Ain Djacer area, Eastern Algeria. Desalination and Water TreatmentDesalination and Water Treatment. 2016;57 :26993-27002.
H. Madani, Valtz A, ZHANG F, ABBADI J, HOURIEZ C, PARICAUD P, C.Coquelet, D. Ramjugernath.
Isothermal vapor–liquid equilibrium data for the trifluoromethane (R23) + 2,3,3,3-tetrafluoroprop-1-ene (R1234yf) system at temperatures from 254 to 348 K. Fluid phase EquilibFluid Phase Equilib. 2016;415 :158-165.
H. Madani, Valtz A, ZHANG F, ABBADI J, HOURIEZ C, PARICAUD P, C.Coquelet, D. Ramjugernath.
Isothermal vapor–liquid equilibrium data for the trifluoromethane (R23) + 2,3,3,3-tetrafluoroprop-1-ene (R1234yf) system at temperatures from 254 to 348 K. Fluid phase EquilibFluid Phase Equilib. 2016;415 :158-165.
H. Madani, Valtz A, ZHANG F, ABBADI J, HOURIEZ C, PARICAUD P, C.Coquelet, D. Ramjugernath.
Isothermal vapor–liquid equilibrium data for the trifluoromethane (R23) + 2,3,3,3-tetrafluoroprop-1-ene (R1234yf) system at temperatures from 254 to 348 K. Fluid phase EquilibFluid Phase Equilib. 2016;415 :158-165.
H. Madani, Valtz A, ZHANG F, ABBADI J, HOURIEZ C, PARICAUD P, C.Coquelet, D. Ramjugernath.
Isothermal vapor–liquid equilibrium data for the trifluoromethane (R23) + 2,3,3,3-tetrafluoroprop-1-ene (R1234yf) system at temperatures from 254 to 348 K. Fluid phase EquilibFluid Phase Equilib. 2016;415 :158-165.
H. Madani, Valtz A, ZHANG F, ABBADI J, HOURIEZ C, PARICAUD P, C.Coquelet, D. Ramjugernath.
Isothermal vapor–liquid equilibrium data for the trifluoromethane (R23) + 2,3,3,3-tetrafluoroprop-1-ene (R1234yf) system at temperatures from 254 to 348 K. Fluid phase EquilibFluid Phase Equilib. 2016;415 :158-165.
H. Madani, Valtz A, ZHANG F, ABBADI J, HOURIEZ C, PARICAUD P, C.Coquelet, D. Ramjugernath.
Isothermal vapor–liquid equilibrium data for the trifluoromethane (R23) + 2,3,3,3-tetrafluoroprop-1-ene (R1234yf) system at temperatures from 254 to 348 K. Fluid phase EquilibFluid Phase Equilib. 2016;415 :158-165.
H. Madani, Valtz A, ZHANG F, ABBADI J, HOURIEZ C, PARICAUD P, C.Coquelet, D. Ramjugernath.
Isothermal vapor–liquid equilibrium data for the trifluoromethane (R23) + 2,3,3,3-tetrafluoroprop-1-ene (R1234yf) system at temperatures from 254 to 348 K. Fluid phase EquilibFluid Phase Equilib. 2016;415 :158-165.
MENANI M-R.
IWRM in north Eastern Batna plains. 43rd IAH congress, 25-29 sept. 2016.
Boukhenoufa N, Ramdane M, Djamil R.
Journal of SemiconductorsPAPERStructural, optical, morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol—gel dip coating process, ISSN / e-ISSN 1674-4926 / 1674-4926. Journal of SemiconductorsJournal of Semiconductors. 2016;Volume 37.
AbstractIn this work, sol—gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films. The impact of Al-doped concentration on the structural, optical, surface morphological and electrical properties of the elaborated samples was investigated. It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5%, where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ωcm. Moreover, highest transparency has been recorded for the same Al concentration value. The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.