The use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

The use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

The use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

The use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Recently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogenerator-based circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogenerator-based process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.

Recently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogeneratorbased circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogeneratorbased process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.

Recently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogenerator-based circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogenerator-based process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.

Recently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogeneratorbased circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogeneratorbased process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.

Recently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogenerator-based circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogenerator-based process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.

Recently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogeneratorbased circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogeneratorbased process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.

Recently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogenerator-based circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogenerator-based process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.

Recently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogeneratorbased circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogeneratorbased process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.