A comparative study on scaling capabilities of Si and SiGe nanoscale double gate tunneling FETs

Citation:

Bentrcia T, DJEFFAL F, Ferhati H, Dibi Z. A comparative study on scaling capabilities of Si and SiGe nanoscale double gate tunneling FETs. SiliconSilicon. 2020;12 :945-953.

Date Published:

2020

Publications /Année

Submitted (11)
2024 (16)
2023 (28)
2022 (169)
2021 (473)
2020 (440)
2019 (553)
2018 (630)
2017 (522)
2016 (439)

Publications / Auteur

Publications / Types