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Modeling and Simulation of Double Gate Field Plate In0.2Ga0.8 As/Al0.3 Ga0.7 as HEMT using Gaussian Process Regression for Sensor Application

Citation:

Yousfi A, Dibi Z, Guermoui M, Aissi S. Modeling and Simulation of Double Gate Field Plate In0.2Ga0.8 As/Al0.3 Ga0.7 as HEMT using Gaussian Process Regression for Sensor Application. Research Journal of Applied Sciences, Engineering and Technology, Vol. 14, no3, pp. 112-118, 2017.DOI:10.19026/rjaset.14.4153ISSN: 2040-7459e-ISSN: 2040-7467Research Journal of Applied Sciences, Engineering and Technology, Vol. 14, no3, pp. 112-118, 2017. 2018;14 :112-118.

Date Published:

2018

Abstract:

We propose a new approach for modeling a High Electron Mobility Transistor (HEMT) using that of Gaussian Process Regression one (GPR), to improve the current-voltage characteristics of HEMT transistor for using in electronic and biological domain or any other domain that needs it. The study and development of a new Atlas Silvaco device are taking into account the impact of several geometric and electric parameters; we focus on the electrical performances of the double gate field plate In0.2Ga0.8As/Al0.3Ga0.7As HEMT including double heterostructure; we compare the numerical simulation using 2D Atlas Silvaco simulator with the extracted experimental results. Then we validate our model by GPR approach. The GPR approach opens promising opportunities for devices modeling without knowing too much the device physics properties. The obtained results give better performances which lead to fabricate devices with better electrical properties for promoting further investigation.