A two-dimensional semi-analytical analysis of the subthreshold-swing behavior including free carriers and interfacial traps effects for nanoscale double-gate MOSFETs

Citation:

DJEFFAL F, Bendib T, Abdi MA. A two-dimensional semi-analytical analysis of the subthreshold-swing behavior including free carriers and interfacial traps effects for nanoscale double-gate MOSFETs. Microelectronics journalMicroelectronics Journal. 2011;42 :1391-1395.

Date Published:

2011

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