This paper addresses the characterization of the Continental Intercalaire aquifer (CI) in the Tinrhert-East area of Illizi Basin on the Algerian-Libyan border, which belongs to the SASS1 system, one of the biggest transboundary aquifers in the world. This study concerns a superficies of 4 300 km2. On the basis of Mud Logging borehole data conducted in this part of the aquifer, a realistic characterization of the aquifer was done. The thickness of the CI aquifer varies from 300 m in the south to 700 m in the north, and the depth ranges from 180 m to 320 m. The interpretation of the logs showed that the aquifer is characterized by a maximum net thickness in its southwestern part (more than 600 m), the porosity is very high, ranging from 30% in the west to 24% at the Libyan borders, the permeability is low to medium around 10-5 m/s, and the maximum transmissivity values of about 8×10-3 m2/s were recorded at the center of the study area. The depth of water varies from 235 m to 312 m, and the water flows from south to north, in accordance with the general direction observed in the CI aquifer in the Northern Sahara Aquifer System (SASS). The porosity values obtained from the interpretation of the sonic and density logs permit to estimate the water reserves of this aquifer considered fossil, at thresholds much higher than what was considered until now.

Le choix de la Génératrice Synchrone (G.S) dans le système éolien est motivé par de nombreux avantages : Rendement élevé par rapport au générateur à induction, couplage avec l’éolienne sans le recours à un multiplicateur, absence de glissement car son rotor est excité par une source externe de tension continue. Cela lui permet de fonctionner dans une large gamme de vitesse. A cause de la complexité des nouvelles installations industrielles éoliennes, la commande de celles-ci par les correcteurs classiques donne souvent des résultats non satisfaisants. Pour surmonter ce problème, les travaux de recherches actuels s’orientent actuellement vers l’utilisation de commandes non linéaires robustes qui donnent de meilleurs résultats et dans de larges domaines de fonctionnement. Cependant, l’utilisation d’un G.S en tant que générateur électrique au sein d’un system éolien implique de nouvelles problématiques, notamment en ce qui concerne la sûreté de fonctionnement lors de défaillances internes de la machine. Il est ainsi nécessaire de connaître précisément l’état de santé du G.S afin d’assurer une bonne continuité de service.

Our work is mainly about detecting acoustics microwaves in the type of BAW (Bulk acoustic waves), where we compared between Lithium Niobate (LiNbO3) and Lithium Tantalate (LiTaO3) ,during the propagation of acoustic microwaves in a piezoelectric substrate. In this paper, We have used the classification by Probabilistic Neural Network (PNN) as a means of numerical analysis in which we classify all the values of the real part and the imaginary part of the coefficient attenuation with the acoustic velocity for conclude whichever is the best in utilization for generating bulk acoustic waves.This study will be very interesting in modeling and realization of acoustic microwaves devices (ultrasound) based on the propagation of acoustic microwaves.

In this article, we present a comparative study between two control techniques applied on the Permanent Magnet Synchronous Machine (PMSM), namely vector control and fuzzy logic. This comparison is based on three criteria: qualitative, quantitative and robust during the transient and permanent operation of the system. The latter comprises a machine is driven through the stator variables by two bidirectional converters. In the first part, we have presented the individual modeling of the global chain (PMSM, Inverter, and Rectifier). Then we presented and developed the two commands techniques to control the speed and the torque produced by this machine. The results of this study made it possible to evaluate the performance of these controls.

In the last few years, an accelerated trend towards the miniaturization of nanoscale circuits has been recorded. In this context, the Tunneling Field-Effect Transistors (TFETs) are gaining attention because of their good subthreshold characteristics, high scalability and low leakage current. However, they suffer from low values of the ON-state current and severe ambipolar transport mechanism. The aim of this work is to investigate the performance of SiGe nanoscale Double Gate TFET device including low doped drain region. The electrical performance of the considered device is investigated numerically using ATLAS 2D simulator, where both scaling and reliability aspects of the proposed design are reported. In this context, we address the impact of the channel length, traps density and drain doping parameters on the variation of some figures of merit of the device namely the swing factor and the ION/IOFF ratio. The obtained results indicate the superior immunity of the proposed design against traps induced degradation in comparison to the conventional TFET structure. Therefore, this work can offer more insights regarding the benefit of adopting channel materials and drain doping engineering techniques for future reliable low-power nanoscale electronic applications.

Dopant diffusion in semiconductors is a very important in process step of device. diffusion has a great influence on the electrical and electronic properties especially in the lacunary and interstitial mechanismis. This chapter investigates the diffusion of P and B in Si. The profiles have been simulated using Secondary Ion Mass Spectrometry (SIMS) modele [1,2]. In the process for manufacturing MOS transistor, the manufacturers follow basically three steps. The starting substrate is a monocrystalline silicon wafer. The first step consists in producing the polysilicon gate on a thin layer of SiO2 followed by implantation (boron) of the gate. The second step is the training of source-drain junctions by ion implantation to high dose (≈ 10 15 at / cm2) and the third is to silicide the source-drain junctions for reduce the contact resistance. One of the most promising silicides is the monosilicide of nickel (NiSi). therefore, it is very important to understand the redistribution of dopants in the different active parts of a transistor by studying the following points: • The redistribution of boron in polycrystalline silicon (gate), • The redistribution of boron in the monocrystal