Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges

Citation:

DJEFFAL F, Ghoggali Z, Dibi Z, Lakhdar N. Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges. Microelectronics ReliabilityMicroelectronics Reliability. 2009;49 :377-381.

Date Published:

2009

Publications /Année

Submitted (11)
2024 (16)
2023 (28)
2022 (169)
2021 (473)
2020 (440)
2019 (553)
2018 (630)
2017 (522)
2016 (439)

Publications / Auteur

Publications / Types