In this work, thin films of aluminum doped ZnO (AZO) were deposited on ultrasonically cleaned glass substrates by sol-gel process using dip and spin coating techniques. For this purpose, Zinc acetate dihydrate, aluminum nitrate nonahydrate, ethanol and mono ethanolamine were employed as precursor, dopant, solvent and stabilizer, respectively. X-ray diffraction, UV–vis, photoluminescence, 4-point probe and Van der pauw techniques were investigated for the characterization of the prepared AZO thin films. X-ray-analysis revealed that all the prepared films have hexagonal wurtzite structure with a relative preferential orientation along the c-axis and the lattice parameters are close to the standard values reported in literature. UV–vis spectroscopy showed that the average value of the films’ transmittance in the visible region is found to be around 85% and the gap ranges in the interval [3.15 eV–3.30 eV]. The photoluminescence spectrum only showed the UV peak while the broad band of the visible region was completely vanished. The electrical measurements indicate that sol-gel methods provide relatively high resistivities compared to those obtained with physical vapor deposition (PVD) techniques.

Dans les branches de l’industrie et du service, où la différentiation se fait au niveau du produit et où les marges sont singulièrement réduites, la stratégie de réduction des coûts est fondamentale. L’assistance par une informatique intégrée y joue un rôle de plus en plus important. Avec l’aide de l’informatique et du système d’information, non seulement chaque fonction de l’entreprise est améliorée au niveau de son efficience et de son efficacité propres, mais aussi des effets de synergie entre toutes ces fonctions peuvent être cherchés. Les logiciels de GMAO permettent d’optimiser la gestion technique et administrative de l’ensemble des opérations de maintenance d’une entreprise. Ces logiciels automatisent les opérations principales de gestion des stocks de pièces de rechange, optimisent les approvisionnements, éditent les bons de sortie, permettent d’établir un budget prévisionnel en fonction de la fréquence des interventions, etc. Le principe de ce projet est l’implantation d’une GMAO dans un système de production afin d’accroitre la productivité du service maintenance et garantir la fiabilité et la disponibilité des équipements de production de l’entreprise ce qui implique des gains cumulés de temps et d’argents assez important. Pour aboutir à la réussite du projet, l’implantation d’une GMAO nécessite au préalable une analyse fouillée des besoins, une définition précise des objectifs, une préparation soigneuse des acteurs et l’adhésion de tous. Une telle démarche doit se faire sous l’impulsion de la direction avec la participation du personnel de l’entreprise. La difficulté pour l'entreprise qui souhaite s'équiper d'une GMAO est d'en faire un choix qui couvrira exactement ses besoins. Ce choix sera suivi d'un projet d'implantation de la GMAO qui devra prendre en compte divers aspects afin que cette implantation se déroule correctement. Afin d’assurer le succès de la mise en place de la GMAO. Une démarche d’implantation doit être rigoureusement suivie pour faciliter l’intégration de ce nouvel outil informatique à l’organisation interne de l’entreprise.

A new equivalent model of the induction motor with turn to turn fault on one phase has been developed. This model has been used to establish two schemes to estimate the severity of the short circuit fault. In the first scheme, the faulty model is considered as an observer, where a correction of an error between the measured and the estimated currents is the kernel of the fault severity estimator. However, to develop the second method, the model was required only in the training process of an artificial neural network (ANN). Since stator faults have a signature on symmetrical components of phase currents, the magnitudes and angles of these components were used with the mean speed value as inputs of the ANN

A new equivalent model of the induction motor with turn to turn fault on one phase has been developed. This model has been used to establish two schemes to estimate the severity of the short circuit fault. In the first scheme, the faulty model is considered as an observer, where a correction of an error between the measured and the estimated currents is the kernel of the fault severity estimator. However, to develop the second method, the model was required only in the training process of an artificial neural network (ANN). Since stator faults have a signature on symmetrical components of phase currents, the magnitudes and angles of these components were used with the mean speed value as inputs of the ANN

A new equivalent model of the induction motor with turn to turn fault on one phase has been developed. This model has been used to establish two schemes to estimate the severity of the short circuit fault. In the first scheme, the faulty model is considered as an observer, where a correction of an error between the measured and the estimated currents is the kernel of the fault severity estimator. However, to develop the second method, the model was required only in the training process of an artificial neural network (ANN). Since stator faults have a signature on symmetrical components of phase currents, the magnitudes and angles of these components were used with the mean speed value as inputs of the ANN

In this paper, versatile Metal/TCO/p-Si Schottky Barrier Diodes (SBDs) with dissimilar TCO intermediate layers (ZnO and ITO) were fabricated by RF magnetron sputtering technique. An overall electrical performance comparison between the Al/ZnO/p-Si, Au/ITO/p-Si and the conventional Au/p-Si structures is carried out. The measured I-V characteristics indicate that the proposed Al/ZnO/p-Si design exhibits an outstanding capability for achieving a high rectifying ratio of 142 dB. This is mainly due to the enhanced Schottky barrier height (SBH) of 0.75 V and close to unite ideality factor (n = 1.23). Such behavior can be attributed to the enhanced interface quality achieved by introducing TCO inter-layers, which could decrease the Series resistance. A comparative study of the elaborated structures performance is carried out in which new Figures of Merit (FoM) parameters that combine both electrical and thermal stability performances are proposed. The Experimental results show that the proposed designs with ITO and ZnO sub-layers exhibits improved FoM parameters as compared to the conventional Au/p-Si structure. Moreover, this comparative study enables to the designer to acquire a comprehensive review about the Si-based SBDs design tradeoffs. It is demonstrated that the insertion of a TCO inter-layer might be beneficial for avoiding the degradation related-heating effects. Therefore, the proposed designs offer the possibility of bridging the gap between superior electrical performance and high thermal stability, which makes them suitable for developing high-performance Schottky solar cells and sensing applications.

In this paper, versatile Metal/TCO/p-Si Schottky Barrier Diodes (SBDs) with dissimilar TCO intermediate layers (ZnO and ITO) were fabricated by RF magnetron sputtering technique. An overall electrical performance comparison between the Al/ZnO/p-Si, Au/ITO/p-Si and the conventional Au/p-Si structures is carried out. The measured I-V characteristics indicate that the proposed Al/ZnO/p-Si design exhibits an outstanding capability for achieving a high rectifying ratio of 142 dB. This is mainly due to the enhanced Schottky barrier height (SBH) of 0.75 V and close to unite ideality factor (n = 1.23). Such behavior can be attributed to the enhanced interface quality achieved by introducing TCO inter-layers, which could decrease the Series resistance. A comparative study of the elaborated structures performance is carried out in which new Figures of Merit (FoM) parameters that combine both electrical and thermal stability performances are proposed. The Experimental results show that the proposed designs with ITO and ZnO sub-layers exhibits improved FoM parameters as compared to the conventional Au/p-Si structure. Moreover, this comparative study enables to the designer to acquire a comprehensive review about the Si-based SBDs design tradeoffs. It is demonstrated that the insertion of a TCO inter-layer might be beneficial for avoiding the degradation related-heating effects. Therefore, the proposed designs offer the possibility of bridging the gap between superior electrical performance and high thermal stability, which makes them suitable for developing high-performance Schottky solar cells and sensing applications.

In this paper, versatile Metal/TCO/p-Si Schottky Barrier Diodes (SBDs) with dissimilar TCO intermediate layers (ZnO and ITO) were fabricated by RF magnetron sputtering technique. An overall electrical performance comparison between the Al/ZnO/p-Si, Au/ITO/p-Si and the conventional Au/p-Si structures is carried out. The measured I-V characteristics indicate that the proposed Al/ZnO/p-Si design exhibits an outstanding capability for achieving a high rectifying ratio of 142 dB. This is mainly due to the enhanced Schottky barrier height (SBH) of 0.75 V and close to unite ideality factor (n = 1.23). Such behavior can be attributed to the enhanced interface quality achieved by introducing TCO inter-layers, which could decrease the Series resistance. A comparative study of the elaborated structures performance is carried out in which new Figures of Merit (FoM) parameters that combine both electrical and thermal stability performances are proposed. The Experimental results show that the proposed designs with ITO and ZnO sub-layers exhibits improved FoM parameters as compared to the conventional Au/p-Si structure. Moreover, this comparative study enables to the designer to acquire a comprehensive review about the Si-based SBDs design tradeoffs. It is demonstrated that the insertion of a TCO inter-layer might be beneficial for avoiding the degradation related-heating effects. Therefore, the proposed designs offer the possibility of bridging the gap between superior electrical performance and high thermal stability, which makes them suitable for developing high-performance Schottky solar cells and sensing applications.

In this paper, versatile Metal/TCO/p-Si Schottky Barrier Diodes (SBDs) with dissimilar TCO intermediate layers (ZnO and ITO) were fabricated by RF magnetron sputtering technique. An overall electrical performance comparison between the Al/ZnO/p-Si, Au/ITO/p-Si and the conventional Au/p-Si structures is carried out. The measured I-V characteristics indicate that the proposed Al/ZnO/p-Si design exhibits an outstanding capability for achieving a high rectifying ratio of 142 dB. This is mainly due to the enhanced Schottky barrier height (SBH) of 0.75 V and close to unite ideality factor (n = 1.23). Such behavior can be attributed to the enhanced interface quality achieved by introducing TCO inter-layers, which could decrease the Series resistance. A comparative study of the elaborated structures performance is carried out in which new Figures of Merit (FoM) parameters that combine both electrical and thermal stability performances are proposed. The Experimental results show that the proposed designs with ITO and ZnO sub-layers exhibits improved FoM parameters as compared to the conventional Au/p-Si structure. Moreover, this comparative study enables to the designer to acquire a comprehensive review about the Si-based SBDs design tradeoffs. It is demonstrated that the insertion of a TCO inter-layer might be beneficial for avoiding the degradation related-heating effects. Therefore, the proposed designs offer the possibility of bridging the gap between superior electrical performance and high thermal stability, which makes them suitable for developing high-performance Schottky solar cells and sensing applications.

In this paper, versatile Metal/TCO/p-Si Schottky Barrier Diodes (SBDs) with dissimilar TCO intermediate layers (ZnO and ITO) were fabricated by RF magnetron sputtering technique. An overall electrical performance comparison between the Al/ZnO/p-Si, Au/ITO/p-Si and the conventional Au/p-Si structures is carried out. The measured I-V characteristics indicate that the proposed Al/ZnO/p-Si design exhibits an outstanding capability for achieving a high rectifying ratio of 142 dB. This is mainly due to the enhanced Schottky barrier height (SBH) of 0.75 V and close to unite ideality factor (n = 1.23). Such behavior can be attributed to the enhanced interface quality achieved by introducing TCO inter-layers, which could decrease the Series resistance. A comparative study of the elaborated structures performance is carried out in which new Figures of Merit (FoM) parameters that combine both electrical and thermal stability performances are proposed. The Experimental results show that the proposed designs with ITO and ZnO sub-layers exhibits improved FoM parameters as compared to the conventional Au/p-Si structure. Moreover, this comparative study enables to the designer to acquire a comprehensive review about the Si-based SBDs design tradeoffs. It is demonstrated that the insertion of a TCO inter-layer might be beneficial for avoiding the degradation related-heating effects. Therefore, the proposed designs offer the possibility of bridging the gap between superior electrical performance and high thermal stability, which makes them suitable for developing high-performance Schottky solar cells and sensing applications.