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2019
Touahria A, Bougriou C. Numerical Investigation of a New Ventilation-radiator. Instrumentation, Mesures, MétrologiesInstrumentation, Mesures, Métrologies. 2019;18.
Noui A, Karech T, Bouzid T. A Numerical Investigation of Dynamic Behavior of a Unit Cell of a Loose sand Reinforced by Stone Column Under the Effect of Gravity Using Finn Model. Indian Geotechnical JournalIndian Geotechnical Journal. 2019;49 :255-264.
Noui A, Karech T, Bouzid T. A Numerical Investigation of Dynamic Behavior of a Unit Cell of a Loose sand Reinforced by Stone Column Under the Effect of Gravity Using Finn Model. Indian Geotechnical JournalIndian Geotechnical Journal. 2019;49 :255-264.
Noui A, Karech T, Bouzid T. A Numerical Investigation of Dynamic Behavior of a Unit Cell of a Loose sand Reinforced by Stone Column Under the Effect of Gravity Using Finn Model. Indian Geotechnical JournalIndian Geotechnical Journal. 2019;49 :255-264.
Guelfen H, Kittaneh F. On Numerical Radius Inequalities for Operator Matrices. Numerical Functional Analysis and OptimizationNumerical Functional Analysis and Optimization. 2019;40 :1231-1241.
Guelfen H, Kittaneh F. On Numerical Radius Inequalities for Operator Matrices. Numerical Functional Analysis and OptimizationNumerical Functional Analysis and Optimization. 2019;40 :1231-1241.
Abderraouf B, Brahim BENMOHAMMED. Numerical simulation of chip formation in case of orthogonal machining process. The international conference on innovative materials, manufacturing, and advanced technologies (IMMAT’2019),17-19 Octobre, . 2019.
Abderraouf B, Brahim BENMOHAMMED. Numerical simulation of chip formation in case of orthogonal machining process. The international conference on innovative materials, manufacturing, and advanced technologies (IMMAT’2019),17-19 Octobre, . 2019.
Toufik BENDIB, Brahim L, Souhil KOUDA, Mohamed.Amir A, Abedelghani D, Chebaki E, Aouf AE, Fayçal M, Samir B. Numerical Study of Low Gain Avalanche Detector Performance. 2018 International Conference on Communications and Electrical Engineering (ICCEE). 2019.Abstract

In this paper, we present a new ultra fast detector called Low Gain Avalanche Detector (LGAD) with low internal gain. The LGAD is fabricated with conventional APD technology with a modified doping profile, in the multiplication region, which affects the device performance such as: breakdown, multiplication gain and noise factor. For this reason, a numerical method based on Newton-Raphson calculation is proposed to estimate the electrostatic potential and electric field models of low gain avalanche detectors (LGADs) in order to investigate their performances. These models have been validated by their agreement with TCAD numerical simulation results. The effect of Boron doping profile, with different doses in the multiplication region, on the LGAD electrical performance is studied for various device structures in order to extend the device capability to its limit. In addition, LGAD devices are simulated for different temperature considering the effect of the temperature on the multiplication gain.

Toufik BENDIB, Brahim L, Souhil KOUDA, Mohamed.Amir A, Abedelghani D, Chebaki E, Aouf AE, Fayçal M, Samir B. Numerical Study of Low Gain Avalanche Detector Performance. 2018 International Conference on Communications and Electrical Engineering (ICCEE). 2019.Abstract

In this paper, we present a new ultra fast detector called Low Gain Avalanche Detector (LGAD) with low internal gain. The LGAD is fabricated with conventional APD technology with a modified doping profile, in the multiplication region, which affects the device performance such as: breakdown, multiplication gain and noise factor. For this reason, a numerical method based on Newton-Raphson calculation is proposed to estimate the electrostatic potential and electric field models of low gain avalanche detectors (LGADs) in order to investigate their performances. These models have been validated by their agreement with TCAD numerical simulation results. The effect of Boron doping profile, with different doses in the multiplication region, on the LGAD electrical performance is studied for various device structures in order to extend the device capability to its limit. In addition, LGAD devices are simulated for different temperature considering the effect of the temperature on the multiplication gain.

Toufik BENDIB, Brahim L, Souhil KOUDA, Mohamed.Amir A, Abedelghani D, Chebaki E, Aouf AE, Fayçal M, Samir B. Numerical Study of Low Gain Avalanche Detector Performance. 2018 International Conference on Communications and Electrical Engineering (ICCEE). 2019.Abstract

In this paper, we present a new ultra fast detector called Low Gain Avalanche Detector (LGAD) with low internal gain. The LGAD is fabricated with conventional APD technology with a modified doping profile, in the multiplication region, which affects the device performance such as: breakdown, multiplication gain and noise factor. For this reason, a numerical method based on Newton-Raphson calculation is proposed to estimate the electrostatic potential and electric field models of low gain avalanche detectors (LGADs) in order to investigate their performances. These models have been validated by their agreement with TCAD numerical simulation results. The effect of Boron doping profile, with different doses in the multiplication region, on the LGAD electrical performance is studied for various device structures in order to extend the device capability to its limit. In addition, LGAD devices are simulated for different temperature considering the effect of the temperature on the multiplication gain.

Toufik BENDIB, Brahim L, Souhil KOUDA, Mohamed.Amir A, Abedelghani D, Chebaki E, Aouf AE, Fayçal M, Samir B. Numerical Study of Low Gain Avalanche Detector Performance. 2018 International Conference on Communications and Electrical Engineering (ICCEE). 2019.Abstract

In this paper, we present a new ultra fast detector called Low Gain Avalanche Detector (LGAD) with low internal gain. The LGAD is fabricated with conventional APD technology with a modified doping profile, in the multiplication region, which affects the device performance such as: breakdown, multiplication gain and noise factor. For this reason, a numerical method based on Newton-Raphson calculation is proposed to estimate the electrostatic potential and electric field models of low gain avalanche detectors (LGADs) in order to investigate their performances. These models have been validated by their agreement with TCAD numerical simulation results. The effect of Boron doping profile, with different doses in the multiplication region, on the LGAD electrical performance is studied for various device structures in order to extend the device capability to its limit. In addition, LGAD devices are simulated for different temperature considering the effect of the temperature on the multiplication gain.

Toufik BENDIB, Brahim L, Souhil KOUDA, Mohamed.Amir A, Abedelghani D, Chebaki E, Aouf AE, Fayçal M, Samir B. Numerical Study of Low Gain Avalanche Detector Performance. 2018 International Conference on Communications and Electrical Engineering (ICCEE). 2019.Abstract

In this paper, we present a new ultra fast detector called Low Gain Avalanche Detector (LGAD) with low internal gain. The LGAD is fabricated with conventional APD technology with a modified doping profile, in the multiplication region, which affects the device performance such as: breakdown, multiplication gain and noise factor. For this reason, a numerical method based on Newton-Raphson calculation is proposed to estimate the electrostatic potential and electric field models of low gain avalanche detectors (LGADs) in order to investigate their performances. These models have been validated by their agreement with TCAD numerical simulation results. The effect of Boron doping profile, with different doses in the multiplication region, on the LGAD electrical performance is studied for various device structures in order to extend the device capability to its limit. In addition, LGAD devices are simulated for different temperature considering the effect of the temperature on the multiplication gain.

Toufik BENDIB, Brahim L, Souhil KOUDA, Mohamed.Amir A, Abedelghani D, Chebaki E, Aouf AE, Fayçal M, Samir B. Numerical Study of Low Gain Avalanche Detector Performance. 2018 International Conference on Communications and Electrical Engineering (ICCEE). 2019.Abstract

In this paper, we present a new ultra fast detector called Low Gain Avalanche Detector (LGAD) with low internal gain. The LGAD is fabricated with conventional APD technology with a modified doping profile, in the multiplication region, which affects the device performance such as: breakdown, multiplication gain and noise factor. For this reason, a numerical method based on Newton-Raphson calculation is proposed to estimate the electrostatic potential and electric field models of low gain avalanche detectors (LGADs) in order to investigate their performances. These models have been validated by their agreement with TCAD numerical simulation results. The effect of Boron doping profile, with different doses in the multiplication region, on the LGAD electrical performance is studied for various device structures in order to extend the device capability to its limit. In addition, LGAD devices are simulated for different temperature considering the effect of the temperature on the multiplication gain.

Toufik BENDIB, Brahim L, Souhil KOUDA, Mohamed.Amir A, Abedelghani D, Chebaki E, Aouf AE, Fayçal M, Samir B. Numerical Study of Low Gain Avalanche Detector Performance. 2018 International Conference on Communications and Electrical Engineering (ICCEE). 2019.Abstract

In this paper, we present a new ultra fast detector called Low Gain Avalanche Detector (LGAD) with low internal gain. The LGAD is fabricated with conventional APD technology with a modified doping profile, in the multiplication region, which affects the device performance such as: breakdown, multiplication gain and noise factor. For this reason, a numerical method based on Newton-Raphson calculation is proposed to estimate the electrostatic potential and electric field models of low gain avalanche detectors (LGADs) in order to investigate their performances. These models have been validated by their agreement with TCAD numerical simulation results. The effect of Boron doping profile, with different doses in the multiplication region, on the LGAD electrical performance is studied for various device structures in order to extend the device capability to its limit. In addition, LGAD devices are simulated for different temperature considering the effect of the temperature on the multiplication gain.

Toufik BENDIB, Brahim L, Souhil KOUDA, Mohamed.Amir A, Abedelghani D, Chebaki E, Aouf AE, Fayçal M, Samir B. Numerical Study of Low Gain Avalanche Detector Performance. 2018 International Conference on Communications and Electrical Engineering (ICCEE). 2019.Abstract

In this paper, we present a new ultra fast detector called Low Gain Avalanche Detector (LGAD) with low internal gain. The LGAD is fabricated with conventional APD technology with a modified doping profile, in the multiplication region, which affects the device performance such as: breakdown, multiplication gain and noise factor. For this reason, a numerical method based on Newton-Raphson calculation is proposed to estimate the electrostatic potential and electric field models of low gain avalanche detectors (LGADs) in order to investigate their performances. These models have been validated by their agreement with TCAD numerical simulation results. The effect of Boron doping profile, with different doses in the multiplication region, on the LGAD electrical performance is studied for various device structures in order to extend the device capability to its limit. In addition, LGAD devices are simulated for different temperature considering the effect of the temperature on the multiplication gain.

Toufik BENDIB, Brahim L, Souhil KOUDA, Mohamed.Amir A, Abedelghani D, Chebaki E, Aouf AE, Fayçal M, Samir B. Numerical Study of Low Gain Avalanche Detector Performance. 2018 International Conference on Communications and Electrical Engineering (ICCEE). 2019.Abstract

In this paper, we present a new ultra fast detector called Low Gain Avalanche Detector (LGAD) with low internal gain. The LGAD is fabricated with conventional APD technology with a modified doping profile, in the multiplication region, which affects the device performance such as: breakdown, multiplication gain and noise factor. For this reason, a numerical method based on Newton-Raphson calculation is proposed to estimate the electrostatic potential and electric field models of low gain avalanche detectors (LGADs) in order to investigate their performances. These models have been validated by their agreement with TCAD numerical simulation results. The effect of Boron doping profile, with different doses in the multiplication region, on the LGAD electrical performance is studied for various device structures in order to extend the device capability to its limit. In addition, LGAD devices are simulated for different temperature considering the effect of the temperature on the multiplication gain.

AMADJI M, Ameddah H, Mazouz H. Numerical study of the biomimetic M6-C Prosthesis with viscoelastic core. UPB Sci Bull, Series DUPB Sci Bull, Series D. 2019;81 :121-134.
AMADJI M, Ameddah H, Mazouz H. Numerical study of the biomimetic M6-C Prosthesis with viscoelastic core. UPB Sci Bull, Series DUPB Sci Bull, Series D. 2019;81 :121-134.
AMADJI M, Ameddah H, Mazouz H. Numerical study of the biomimetic M6-C Prosthesis with viscoelastic core. UPB Sci Bull, Series DUPB Sci Bull, Series D. 2019;81 :121-134.

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