Touatit A, Bougriou C.
Comparative Study on Concentric Triple Tube Heat Exchangers Using (GA). 2nd National Conference on Computational Fluid Dynamics & Technology. 2018.
Hedjazi MA, Kourbane I, Genc Y, Ali B.
A comparison of Hadoop, Spark and Storm for the task of large scale image classification. 2018 26th Signal Processing and Communications Applications Conference (SIU). 2018 :1-4.
Hedjazi MA, Kourbane I, Genc Y, Ali B.
A comparison of Hadoop, Spark and Storm for the task of large scale image classification. 2018 26th Signal Processing and Communications Applications Conference (SIU). 2018 :1-4.
Hedjazi MA, Kourbane I, Genc Y, Ali B.
A comparison of Hadoop, Spark and Storm for the task of large scale image classification. 2018 26th Signal Processing and Communications Applications Conference (SIU). 2018 :1-4.
Hedjazi MA, Kourbane I, Genc Y, Ali B.
A comparison of Hadoop, Spark and Storm for the task of large scale image classification. 2018 26th Signal Processing and Communications Applications Conference (SIU). 2018 :1-4.
Bentrcia R, Zidat S, Marir F.
Computer and Information Sciences. Journal of King Saud University–Computer and Information SciencesJournal of King Saud University–Computer and Information Sciences. 2018;30 :382-390.
Bentrcia R, Zidat S, Marir F.
Computer and Information Sciences. Journal of King Saud University–Computer and Information SciencesJournal of King Saud University–Computer and Information Sciences. 2018;30 :382-390.
Bentrcia R, Zidat S, Marir F.
Computer and Information Sciences. Journal of King Saud University–Computer and Information SciencesJournal of King Saud University–Computer and Information Sciences. 2018;30 :382-390.
HEDJAZI D.
Constructing collective competence: a new CSCW-based approach. International Journal of Information and Communication TechnologyInternational Journal of Information and Communication Technology. 2018;12 :4.
AbstractWithin the majority of contexts, it is persons that are considered to be competent or incompetent. However, in many cases it is the performance of groups and teams that is most important. This implies a concept of collective competence that integrates the set of skills in a group. In addition, the collective competence construction process is also enriched through collaboration which implies exchanges, confrontations, negotiations and interpersonal interactions. This paper presents our CSCW-based approach supporting collective competence construction. As a case of study, the industrial maintenance workspace is fundamentally a collaborative context. Our contribution in this area led us first, to analyse the related task in order to highlight collaborative maintenance vital needs and design the appropriate required group awareness supports which will be used to support collective competence. Finally, the experimentation study identifies the highly effective group awareness tools.
Seghir K, Bendaoui M, Benbouta R.
A Contact Problem of an Elastic Layer Compressed by Two Punches of Different Radii. Journal of Solid MechanicsJournal of Solid Mechanics. 2018;10 :571-580.
Seghir K, Bendaoui M, Benbouta R.
A Contact Problem of an Elastic Layer Compressed by Two Punches of Different Radii. Journal of Solid MechanicsJournal of Solid Mechanics. 2018;10 :571-580.
Seghir K, Bendaoui M, Benbouta R.
A Contact Problem of an Elastic Layer Compressed by Two Punches of Different Radii. Journal of Solid MechanicsJournal of Solid Mechanics. 2018;10 :571-580.
Nidhal A, Fayçal DJEFFAL, Toufik B.
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;Vloume. 17 :pp 724-735.
AbstractA continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-κ layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.
Abdelmalek N, DJEFFAL F, Bentrcia T.
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;17 :724-735.
Nidhal A, Fayçal DJEFFAL, Toufik B.
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;Vloume. 17 :pp 724-735.
AbstractA continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-κ layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.
Abdelmalek N, DJEFFAL F, Bentrcia T.
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;17 :724-735.
Nidhal A, Fayçal DJEFFAL, Toufik B.
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;Vloume. 17 :pp 724-735.
AbstractA continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-κ layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.