Reliable data transport is an essential requirement for many multimedia applications in wireless sensor networks. Actually, an efficient transport protocol for these applications must take into account not only reliability and energy consumption factors but also memory occupancy and data delivery delay. Recently, many research works have been conducted in this area, however the proposed protocols treat some of these aspects and neglect others. Contrarily, in this paper we present a novel transport solution designed to provide 100% reliability without making light of other factors. Through different mechanisms, we attempt to reach this objective with congestion avoidance and good performances in terms of energy consumption, delivery delay, and memory storage. The proposed protocol, called congestion avoidance with reliable transmission and energy efficiency (CARTEE), attains these goals through several mechanisms, namely: fixed sliding window transmission, alternative implicit/explicit acknowledgement, a new congestion detection technique, and distributed transmission rate adjustment. To evaluate the proposed protocol, we have conducted simulations using ns-3. The obtained results confirm the efficiency and scalability of CARTEE and demonstrate that it outperforms the recent proposed transport protocols in terms of reliability, congestion avoidance, data cache occupancy, and latency.

In this note, we present several characterizations for some distinguished classes of bounded Hilbert space operators (self-adjoint operators, normal operators, unitary operators, and isometry operators) in terms of operator inequalities.

In this note, we present several characterizations for some distinguished classes of bounded Hilbert space operators (self-adjoint operators, normal operators, unitary operators, and isometry operators) in terms of operator inequalities.

The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).

The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).